Epitaxial Growth of III-Nitride Compounds (eBook)
IX, 223 Seiten
Springer International Publishing (Verlag)
978-3-319-76641-6 (ISBN)
This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds.
Takashi Matsuoka received his PhD degree in Engineering from Hokkaido University, Sapporo, Japan and has been a Professor at the Institute for Materials Research at Tohoku University, Sendai, Japan since 2005. Having worked at the NTT from 1978 to 2005, he developed a single-longitudinal mode laser diode and proposed the InGaAlN system and the epitaxial growth of a single crystalline InGaN layer for blue LEDs.
Yoshihiro Kangawa has been an Associate Professor at the Research Institute for Applied Mechanics (RIAM) of Kyushu University, Fukuoka, Japan since 2005. He received his Doctor of Engineering from Kyushu University and was a research associate at Gakushuin University, Tokyo, Japan from 2000 to 2002. He subsequently served as a research associate at the Department of Applied Chemistry at Tokyo University of Agriculture and Technology from 2002 to 2004. His research is concerned with theoretical investigation of the crystal growth mechanism, e.g. using ab initio-based approaches and thermodynamic analysis.
Takashi Matsuoka received his PhD degree in Engineering from Hokkaido University, Sapporo, Japan and has been a Professor at the Institute for Materials Research at Tohoku University, Sendai, Japan since 2005. Having worked at the NTT from 1978 to 2005, he developed a single-longitudinal mode laser diode and proposed the InGaAlN system and the epitaxial growth of a single crystalline InGaN layer for blue LEDs. Yoshihiro Kangawa has been an Associate Professor at the Research Institute for Applied Mechanics (RIAM) of Kyushu University, Fukuoka, Japan since 2005. He received his Doctor of Engineering from Kyushu University and was a research associate at Gakushuin University, Tokyo, Japan from 2000 to 2002. He subsequently served as a research associate at the Department of Applied Chemistry at Tokyo University of Agriculture and Technology from 2002 to 2004. His research is concerned with theoretical investigation of the crystal growth mechanism, e.g. using ab initio-based approaches and thermodynamic analysis.
1. Introduction 2. Computational methods 2.1 Ab initio calculations 2.2 Empirical interatomic potentials 2.3 Monte Carlo simulations 3. Fundamental properties of III-nitrides 3.1 Crystal structure 3.2 Band structure 3.3 Miscibility (InGaN and etc.) 3.4 Dislocation core structure 4. Growth processes 4.1 GaN 4.1.1 Surface structures 4.1.2 Adsorption-desorption behavior 4.1.3 Fundamental growth processes 4.1.4 Doping 4.1.5 Polarity dependence (nonpolar & semipolar orientations) 4.2 InN 4.2.1 Surface structures 4.2.2 Adsorption-desorption behavior 4.2.3 Fundamental growth processes 4.2.4 Polarity dependence (nonpolar & semipolar orientations) 4.3 AlN 4.3.1 Surface structures 4.3.2 Adsorption-desorption behavior 4.3.3 Fundamental growth processes 4.3.4 Polarity dependence (nonpolar & semipolar orientations) 4.4 InGaN 4.4.1 Surface structures 4.4.2 Adsorption-desorption behavior 4.4.3 Fundamental growth processes 4.4.5 Polarity dependence (nonpolar & semipolar orientations) 4.5 Nitridation 5. Novel behaviour of thin films 5.1 Structural metastability (4H-AlN on SiC, c-GaN) 5.2 Segregation (InGaN, GaNAs) 5.3 Dislocation formation 5.4 Epitaxial relationship 6. Summary
Erscheint lt. Verlag | 17.4.2018 |
---|---|
Reihe/Serie | Springer Series in Materials Science |
Zusatzinfo | IX, 223 p. 136 illus., 101 illus. in color. |
Verlagsort | Cham |
Sprache | englisch |
Themenwelt | Naturwissenschaften ► Physik / Astronomie |
Technik ► Elektrotechnik / Energietechnik | |
Technik ► Maschinenbau | |
Schlagworte | Adsorption-Desorption Behaviour • Dislocation Core Structure • Empirical Interatomic Potentials • Fundamental Growth Processes • III-Nitride Semiconductors • Monte Carlo simulations • Nonpolar and Semipolar Orientations • Surface Phase Diagram |
ISBN-10 | 3-319-76641-4 / 3319766414 |
ISBN-13 | 978-3-319-76641-6 / 9783319766416 |
Haben Sie eine Frage zum Produkt? |
![PDF](/img/icon_pdf_big.jpg)
Größe: 10,5 MB
DRM: Digitales Wasserzeichen
Dieses eBook enthält ein digitales Wasserzeichen und ist damit für Sie personalisiert. Bei einer missbräuchlichen Weitergabe des eBooks an Dritte ist eine Rückverfolgung an die Quelle möglich.
Dateiformat: PDF (Portable Document Format)
Mit einem festen Seitenlayout eignet sich die PDF besonders für Fachbücher mit Spalten, Tabellen und Abbildungen. Eine PDF kann auf fast allen Geräten angezeigt werden, ist aber für kleine Displays (Smartphone, eReader) nur eingeschränkt geeignet.
Systemvoraussetzungen:
PC/Mac: Mit einem PC oder Mac können Sie dieses eBook lesen. Sie benötigen dafür einen PDF-Viewer - z.B. den Adobe Reader oder Adobe Digital Editions.
eReader: Dieses eBook kann mit (fast) allen eBook-Readern gelesen werden. Mit dem amazon-Kindle ist es aber nicht kompatibel.
Smartphone/Tablet: Egal ob Apple oder Android, dieses eBook können Sie lesen. Sie benötigen dafür einen PDF-Viewer - z.B. die kostenlose Adobe Digital Editions-App.
Buying eBooks from abroad
For tax law reasons we can sell eBooks just within Germany and Switzerland. Regrettably we cannot fulfill eBook-orders from other countries.
aus dem Bereich