Handbook of Advanced Semiconductor Field Effect Transistors (eBook)

Ekta Goel, Archana Pandey, Shiromani Balmukund Rahi, Arun Samuel (Herausgeber)

eBook Download: PDF

2025
525 Seiten
Wiley-Scrivener (Verlag)
978-1-394-41259-4 (ISBN)

Infos

Advance your understanding of semiconductor technology with this indispensable handbook, offering an in-depth look at the modeling, simulation, and fabrication of advanced nanoscale semiconductor field-effect transistors (FETs).

Advanced nanoscale semiconductor field-effect transistors (FETs) represent a pivotal advancement in semiconductor technology, catering to the growing demand for energy-efficient low power electronic devices for emerging applications. This development has significantly impacted the electronics industry, particularly in the design and fabrication of integrated circuits for applications ranging from portable electronics to Internet of Things (IoT) devices. This book provides a comprehensive look at the modelling, simulation, characterization, and fabrication of modern semiconductor FET transistors to improve performance in terms of reduced weight and size, improved subthreshold characteristics and switching performance, and lower power consumption. Handbook of Advanced Semiconductor Field Effect Transistors provides deep insight into the evolving possibilities and challenges of emerging advanced nanoscale FETs. By focusing on the fundamentals of nanoscience and expert knowledge on advanced nanoscale semiconductors, this book serves as a well-rounded guide for novices and professionals looking to innovate in this growing field.

Ekta Goel, PhD is an assistant professor at the National Institute of Technology Warangal. She has published one book chapter and over 50 research articles in peer-reviewed journals and conferences. Her areas of research include modeling and simulation of advanced nanoscale MOS devices, VLSI circuit simulation, photodiodes, and photovoltaic cells.

Archana Pandey, PhD is a senior assistant professor in the Department of Electronics and Communication Engineering at the Jaypee Institute of Information Technology. She has published numerous articles in peer-reviewed international journals and conferences. Her research areas include novel semiconductor devices, FinFETs, device modeling, delay modeling of digital circuit modules, VLSI device-circuit co-design, nanosheet FETs, and FET biosensors.

Shiromani Balmukund Rahi, PhD is an assistant professor at the Mahamaya College of Agriculture, Engineering, and Technology. He has published 25 research papers, two conference proceedings, and 20 book chapters in addition to editing seven books. His work focuses on the development of IoTs for smart applications ultra-low power devices such as tunnel FETs, negative capacitance FETs, and nanosheets.

Arun Samuel, PhD is a professor at the National Engineering College in Kovilpatti, India. He has over 90 publications to his credit and is a lifetime member of the Institute of Engineering and the Institute of Electrical and Electronics Engineers. His research interests include modelling and simulation of multi-gate transistors and tunnel field-effect transistors.

Produkt-Details

• Erscheint lt. Verlag: 31.10.2025
• Sprache: englisch
• Themenwelt: Naturwissenschaften ► Chemie
• Themenwelt: Technik ► Maschinenbau
• Schlagworte: 2D Materials • Advanced FETs • Channel Engineering • FETs • Gate Engineering • MOSFETs • Nanoelectronic MOS Devices • Nanoscale Devices • Nanoscaled Low Power Semiconductor Devices • Negative Capacitance FETs • Scaling of MOS Devices • Semiconductor Devices • Short channel effects • tunnel field effect transistors • Vertical MOSFETs
• ISBN-10: 1-394-41259-2 / 1394412592
• ISBN-13: 978-1-394-41259-4 / 9781394412594