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CMOS Plasma and Process Damage - Kirk Prall

CMOS Plasma and Process Damage

(Autor)

Buch | Hardcover
XIX, 466 Seiten
2025
Springer International Publishing (Verlag)
978-3-031-89028-4 (ISBN)
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This book discusses the complex technology of building CMOS computer chips and covers some of the unusual problems that can occur during chip manufacturing. Readers will learn how plasma and process damage results from the high-energy processes that are used in chip manufacturing, causing harm to the chips, functional failure and reliability problems. 

Kirk D. Prall (M'82) was born in 1958. He received the Ph.D. degree in electrical engineering from the University of New Mexico, Albuquerque, in 1990.,He worked for Philips Semiconductors from 1982 to 1991, in the areas of EPROM, ROM, microprocessors. He joined Micron, Inc., Boise, ID, in 1991 and has been doing research and development in DRAM and flash memories. He is currently assigned as Director of Flash Process Development. He has published several papers and holds 90 patents.

Chapter 1. BACKGROUND.- Chapter 2. THE ANTENNA EFFECT.- Chapter 3. DIODE AND TRANSISTOR PROTECTION.- Chapter 4. SIGNATURES OF PROCESS DAMAGE.- Chapter 5. ELECTRICAL SIGNATURES OF PROCESS DAMAGE.- Chapter 6. LATENT DAMAGE AND RELIABILITY DEGRADATION.- Chapter 7. ATOMIC-LEVEL DEFECTS AND ELECTRICAL EFFECTS.- Chapter 8. TECHNOLOGY SPECIFIC PROCESS DAMAGE.- Chapter 9. COMMON SOURCES OF PROCESS DAMAGE.- Chapter 10. INLINE PROCESS DAMAGE MEASUREMENTS.- Chapter 11. PROCESS DAMAGE TEST STRUCTURES.- Chapter 12. DESIGN RULES RELATED TO PROCESS DAMAGE .- Chapter 13. PARAMETRIC DAMAGE TESTING STRATEGY AND PROCEDURES.- Chapter 14. THE ROLE OF HYDROGEN.- Chapter 15. METALLIC DEFECTS.- Chapter 16. MOBILE ION CONTAMINATION.- Chapter 17. FIXED CHARGE.

Erscheinungsdatum
Zusatzinfo XIX, 466 p. 399 illus., 368 illus. in color.
Verlagsort Cham
Sprache englisch
Maße 155 x 235 mm
Themenwelt Informatik Weitere Themen Hardware
Naturwissenschaften Physik / Astronomie Festkörperphysik
Technik Elektrotechnik / Energietechnik
Schlagworte CMOS Hydrogen Effects • CMOS Metal Contamination • CMOS Mobile Ions • CMOS Process Damage • plasma damage • Reliability Degradation
ISBN-10 3-031-89028-0 / 3031890280
ISBN-13 978-3-031-89028-4 / 9783031890284
Zustand Neuware
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