Epitaxial Graphene on Silicon Carbide
Pan Stanford Publishing Pte Ltd (Verlag)
978-981-4774-20-8 (ISBN)
The book includes relevant examples on synthesis and characterization techniques as well as device fabrication processing and performance and complements them with theoretical modeling and simulation studies, which are helpful in the fundamental comprehension of EG-SiC substrates and their potential use in electronic applications. It addresses the fundamental aspects of EG-SiC using quantum Hall effect studies as well as probe techniques, such as scanning tunneling microscopy or atomic resolution imaging based on transmission electron microscopy. It comprises chapters that present reviews and vision on the current state of the art of experts in physics, electronic engineering, materials science, and nanotechnology from Europe and Asia.
Gemma Rius is a Beatriu de Pinós postdoctoral fellow at the Institute of Microelectronics of Barcelona-National Center of Microelectronics (IMB-CNM) of the Spanish National Research Council (Superior Council for Scientific Research, CSIC) since 2015. She graduated in physics from the Autonomous University of Barcelona, Spain. From 2002 to 2008, she was a nanolithography engineer and PhD student at IMB-CNM, CSIC. She ws a postdoctoral researcher at Tohoku University and Toyota Technological Institute in Japan. She then joined Nagoya Institute of Technology, Japan, as assistant professor. She has been mainly working on nanostructuring of 2D materials and has been involved in carbon nanomaterials, such as graphene, for more than 12 years. Philippe Godignon is a professor of electronic engineering, aerospace engineering, and physical chemistry at IMB-CNM. He received his PhD in electrical engineering in 1993 from the National Institute of Applied Sciences in Lyon, France. Since 1990, he has been working with the Power Devices and Systems group of IMB-CNM on Si and SiC semiconductor device design and technologies. More recently, he has also been working on the synthesis and processing of carbon-based materials (carbon nanotubes, graphene, and polymers) for nanotechnologies and biosensors. He is co-author of more than 235 publications in international journals and numerous presentation for conferences and holds 16 patents. He also participated in the creation of two companies, Graphene Nanotech S. L., Spain, and CALY Technologies, France.
1. Epitaxial Graphene on SiC Substrate: A View from a Specialist of SiC Growth and Material Science. 2. Growth Mechanism, Structures, and Properties of Graphene on SiC(0001) Surfaces: Theoretical and Experimental Studies at the Atomic Scale. 3. Fabrication of Graphene by Thermal Decomposition of SiC. 4. Nanoscale Electrical and Structural Properties of Epitaxial Graphene Interface with SiC(0001). 5. Theory of Graphene Growth on SiC Substrate. 6. Epitaxial Graphene on SiC from the Viewpoint of Planar Technology. 7. The Beauty of Quantum Transport in Graphene. Appendix A. Raman Spectroscopy of Graphene on Silicon Carbide. Appendix B. Graphene on SiC: Chemico-Physical Characterization by XPS.
| Erscheinungsdatum | 12.07.2017 |
|---|---|
| Zusatzinfo | 6 Tables, black and white; 26 Illustrations, color; 74 Illustrations, black and white |
| Verlagsort | Singapore |
| Sprache | englisch |
| Maße | 152 x 229 mm |
| Gewicht | 564 g |
| Themenwelt | Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik |
| Technik ► Maschinenbau | |
| ISBN-10 | 981-4774-20-0 / 9814774200 |
| ISBN-13 | 978-981-4774-20-8 / 9789814774208 |
| Zustand | Neuware |
| Informationen gemäß Produktsicherheitsverordnung (GPSR) | |
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