Nanostructures and Thin Films for Multifunctional Applications (eBook)
XXIV, 576 Seiten
Springer International Publishing (Verlag)
978-3-319-30198-3 (ISBN)
This book is focused on recent advances in the development of thin films for photovoltaic applications, TiO2/WO3 bi-layers for applications with enhanced photo-catalytic properties, nanometer oxide and hydroxide films for anticorrosive coatings, surface passivation in chemical industries, micro- and nanoelectronics, trilayers of metglas and lead free piezoelectrics for magnetic field sensors, current sensors, spintronics, microwave and read/write devices. Diluted ferromagnetic alloy films are also considered for superconducting spintronics based on superconducting spin-valves. Thermal properties of segmented nanowires are analyzed with respect to thermoelectric applications. Recent advances in template production of nanocomposites are also reviewed with particular focus on technologies for template assisted formation of metal nanotubes. Some elements related to abrasive flow machining (AFM), specifically state of the art elements of technological systems and construction of equipment are presented. The book is written for researchers in materials science, nanotechnologies, PhD students and graduate student.
Ion Tiginyanu received his M.S. degree from the Moscow Institute of Physics and Engineering in 1978. He received his Ph.D. degree in Semiconductor Physics from Lebedev Institute of Physics, Academy of Sciences of U.S.S.R., in 1982, and his Doctor habilitate degree in 1991 from the Institute of Applied Physics of the Academy of Sciences of Moldova. He became full professor in 1993 at the Technical University of Moldova. From 1984 to 1998 he worked as senior researcher at the Institute of Applied Physics of the Academy of Sciences of Moldova. In 1998 he joined the Technical University of Moldova, being appointed vice-Rector, while in October 2004 he was elected vice-president of the Academy of Sciences of Moldova. He serves as Director of the National Center for Materials Study and Testing and Professor at the Chair of Microelectronics of the Technical University of Moldova. In 1995-96 and 1998-99 he has been a visiting professor at the Institute of High-Frequency Electronics of the Technical University Darmstadt, Germany, while in 2001 - at the Department of Electrical Engineering and Computer Science of the University of Michigan, USA. In March 2013 he was elected first vice-president of the Academy of Sciences of Moldova. Professor Tiginyanu's research interests are related to nanotechnologies, 3D hybrid nanomaterials, ultrathin membranes, photonic crystals, random lasing, cost-effective solar cells and new sensor technologies. He has more than 300 journal publications and 52 technological patents, and edited 5 books in English. His personal Hirsch index equals 31. In 2011 he got the 'Outstanding Inventor' Award from the World Intellectual Property Organization. Along with this, over the last decade he received 17 Gold and Silver Awards at the International Exhibition 'Eureka' (Brussels), International Exhibition of Inventions in Geneva and at the International Exhibition of Inventions and New Products in Pittsburgh (USA). He is member of the Academy of Sciences of Moldova, Honorary member of the Academy of Romanian Scientists (AOSR), senior member of SPIE, and member of the American Association for the Advancement of Science, IEEE, Optical Society of America, Materials Research Society and Electrochemical Society. He is a Honorary Doctor of the Joint Institute for Nuclear Research (Dubna, Russian Federation). He has about 300 scientific journal publications, 5 books in English and 52 technological patents. He got about 2900 citations to published papers (excluding self-citations) and has a Hirsch index: h = 31.
Pavel Topala received his M.S. degree from the Balti State University in 1980, his Ph.D. degree in Engineering from Politehnica University of Bucharest, Romania in 1993, and his Doctor habilitate degree from the Technical University of Moldova in 2008. He became full professor in 2009 at the Balti State University, Republic of Moldova. In the period from 1982 to 1984, and from 1994 to 2009 he worked as lecturer, associate professor, and head of the Technological Department at the Balti State University. Since 2010 he serves as dean of the Department of Exact, Economic and Environmental Sciences at the same university. He is also the head of the scientific laboratory 'Micro- and nano-technologies', head of the Interuniversity Center 'Resonance nano-technologies', member of the National Council of Accreditation and Attestation of the Republic of Moldova, head of subsidiary of the international association ModTech and Romanian Association for Non-conventional Technologies. He has been an invited professor at the University of Tokyo, Japan; at the University 'A. I. Cuza' and University 'Gh. Asachi' of Iasi, Romania; at the Silesian Technological University of Gliwice, Poland and University of Aveiro, Portugal. Professor Topala's research interests are related to nanotechnologies, electric discharge machining, electro-erosion processing, plasma physics, coatings consisting of graphite and oxide nano-structures on metal surfaces. He is author of 5 monographs, more than 200 journal publications and 9 technological patents. He got 15 gold and silver awards at international exhibitions of inventions.
Veaceslav Ursaki received his M.S. degree from the Moscow Institute of Physics and Engineering in 1979 and his Ph.D. degree in Semiconductor Physics from Lebedev Institute of Physics, Academy of Sciences of U.S.S.R., in 1985. He received his Doctor habilitate degree in 1998 from the Institute of Applied Physics of the Academy of Sciences of Moldova. From 1986 to 2013 he worked as senior, leading, and principal researcher, consecutively, at the Institute of Applied Physics of the Academy of Sciences of Moldova. Since 2013 he serves as coordinator of the Department of Engineering and Technological Sciences of the Academy of Sciences of Moldova. He has been a visiting scientist at the Technical University Athens, Greece in 1996-1997; at the Technical University Darmstadt, Germany in 1998; and at the Max-Planck Institute for Solid State Research, Stuttgart, Germany in 2001. Doctor Ursaki's research interests are related to pressure induced phase transitions in ternary and multinary compounds, materials science (III-V, II-VI and ternary compounds, radiation-hard materials, nanostructured materials and nanocomposites), electrical, optical and photoelectrical characterization of semiconductor materials and device structures, lasing effects in solid-state nanostructures, optoelectronic and photonic properties of nanostructures and nanocomposite materials. He has published more than 200 papers in Scopus database and 5 book chapters. He edited 3 books in English and has 30 technological patents. His personal Hirsch index equals 25. He won the Prize of the Academies of Sciences of Ukraine, Belarus and Moldova in 2013. He contributed to the realization of more than 10 international projects, including FP-7 MOLD-ERA Project in 2010-2013.
Ion Tiginyanu received his M.S. degree from the Moscow Institute of Physics and Engineering in 1978. He received his Ph.D. degree in Semiconductor Physics from Lebedev Institute of Physics, Academy of Sciences of U.S.S.R., in 1982, and his Doctor habilitate degree in 1991 from the Institute of Applied Physics of the Academy of Sciences of Moldova. He became full professor in 1993 at the Technical University of Moldova. From 1984 to 1998 he worked as senior researcher at the Institute of Applied Physics of the Academy of Sciences of Moldova. In 1998 he joined the Technical University of Moldova, being appointed vice-Rector, while in October 2004 he was elected vice-president of the Academy of Sciences of Moldova. He serves as Director of the National Center for Materials Study and Testing and Professor at the Chair of Microelectronics of the Technical University of Moldova. In 1995–96 and 1998-99 he has been a visiting professor at the Institute of High-Frequency Electronics of the Technical University Darmstadt, Germany, while in 2001 - at the Department of Electrical Engineering and Computer Science of the University of Michigan, USA. In March 2013 he was elected first vice-president of the Academy of Sciences of Moldova. Professor Tiginyanu’s research interests are related to nanotechnologies, 3D hybrid nanomaterials, ultrathin membranes, photonic crystals, random lasing, cost-effective solar cells and new sensor technologies. He has more than 300 journal publications and 52 technological patents, and edited 5 books in English. His personal Hirsch index equals 31. In 2011 he got the ‘Outstanding Inventor’ Award from the World Intellectual Property Organization. Along with this, over the last decade he received 17 Gold and Silver Awards at the International Exhibition “Eureka” (Brussels), International Exhibition of Inventions in Geneva and at the International Exhibition of Inventions and New Products in Pittsburgh (USA). He is member of the Academy of Sciences of Moldova, Honorary member of the Academy of Romanian Scientists (AOSR), senior member of SPIE, and member of the American Association for the Advancement of Science, IEEE, Optical Society of America, Materials Research Society and Electrochemical Society. He is a Honorary Doctor of the Joint Institute for Nuclear Research (Dubna, Russian Federation). He has about 300 scientific journal publications, 5 books in English and 52 technological patents. He got about 2900 citations to published papers (excluding self-citations) and has a Hirsch index: h = 31. Pavel Topala received his M.S. degree from the Balti State University in 1980, his Ph.D. degree in Engineering from Politehnica University of Bucharest, Romania in 1993, and his Doctor habilitate degree from the Technical University of Moldova in 2008. He became full professor in 2009 at the Balti State University, Republic of Moldova. In the period from 1982 to 1984, and from 1994 to 2009 he worked as lecturer, associate professor, and head of the Technological Department at the Balti State University. Since 2010 he serves as dean of the Department of Exact, Economic and Environmental Sciences at the same university. He is also the head of the scientific laboratory „Micro- and nano-technologies”, head of the Interuniversity Center „Resonance nano-technologies”, member of the National Council of Accreditation and Attestation of the Republic of Moldova, head of subsidiary of the international association ModTech and Romanian Association for Non-conventional Technologies. He has been an invited professor at the University of Tokyo, Japan; at the University “A. I. Cuza” and University “Gh. Asachi” of Iasi, Romania; at the Silesian Technological University of Gliwice, Poland and University of Aveiro, Portugal. Professor Topala’s research interests are related to nanotechnologies, electric discharge machining, electro-erosion processing, plasma physics, coatings consisting of graphite and oxide nano-structures on metal surfaces. He is author of 5 monographs, more than 200 journal publications and 9 technological patents. He got 15 gold and silver awards at international exhibitions of inventions. Veaceslav Ursaki received his M.S. degree from the Moscow Institute of Physics and Engineering in 1979 and his Ph.D. degree in Semiconductor Physics from Lebedev Institute of Physics, Academy of Sciences of U.S.S.R., in 1985. He received his Doctor habilitate degree in 1998 from the Institute of Applied Physics of the Academy of Sciences of Moldova. From 1986 to 2013 he worked as senior, leading, and principal researcher, consecutively, at the Institute of Applied Physics of the Academy of Sciences of Moldova. Since 2013 he serves as coordinator of the Department of Engineering and Technological Sciences of the Academy of Sciences of Moldova. He has been a visiting scientist at the Technical University Athens, Greece in 1996-1997; at the Technical University Darmstadt, Germany in 1998; and at the Max-Planck Institute for Solid State Research, Stuttgart, Germany in 2001. Doctor Ursaki’s research interests are related to pressure induced phase transitions in ternary and multinary compounds, materials science (III-V, II-VI and ternary compounds, radiation-hard materials, nanostructured materials and nanocomposites), electrical, optical and photoelectrical characterization of semiconductor materials and device structures, lasing effects in solid-state nanostructures, optoelectronic and photonic properties of nanostructures and nanocomposite materials. He has published more than 200 papers in Scopus database and 5 book chapters. He edited 3 books in English and has 30 technological patents. His personal Hirsch index equals 25. He won the Prize of the Academies of Sciences of Ukraine, Belarus and Moldova in 2013. He contributed to the realization of more than 10 international projects, including FP-7 MOLD-ERA Project in 2010-2013.
Preface 7
Contents 10
Contributors 19
Part IPreparation and Characterization of ThinFilms for Optoelectronic and SensoricApplications 23
1 The Study of Thin Films by Electrochemical Impedance Spectroscopy 24
Abstract 24
1.1 Introduction 25
1.2 Basics of EIS 25
1.3 EIS Responses During Cathodic Metals and Alloys Films Deposition 33
1.4 Anodization of Metals: Characterization of Oxide Films and Their Growth by EIS 38
1.5 The Study of Underpotential Deposition of Metals by EIS 44
1.6 Characterization of Organic Films onto Metals by EIS 47
1.7 Electrochemical Impedance Spectroscopy (EIS) in Development of Biosensors and Biofuel Cells 50
1.8 Conclusions 55
Acknowledgments 55
References 55
2 Nanostructures Obtained Using Electric Discharges at Atmospheric Pressure 64
Abstract 64
2.1 Introduction 64
2.2 Physical Model of Nano-Pellicle Formation by Applying Pulse Electrical Discharge Machining 67
2.3 Processes of Dissociation, Ionization and Synthesis in the Plasma and on the Electrode Surfaces 70
2.4 Diffusion Processes at Oxide Nano-Pellicle Formation by Applyind PEDM 72
2.5 Technology Development 75
2.6 Results of Experimental Investigations and Their Analysis 81
2.6.1 Results of Technological Investigations on Film Formation 81
2.6.2 Phase Composition of Nano-Oxide Films 89
2.6.3 Morphology and Chemical Composition of Nano-Oxide Films 90
2.6.4 Surface Electrical Resistance 92
2.6.5 Resistance to Corrosion 95
2.7 Conclusions 99
Acknowledgments 100
References 100
3 Graphite Films Deposited on Metal Surface by Pulsed Electrical Discharge Machining 105
Abstract 105
3.1 Introduction 105
3.2 Technology of Graphite Film Forming 106
3.3 Physical Model of Graphite Film Formation by Applying Pulsed Electrical Discharge 108
3.4 Scanning Electron Microscopy Analysis of the Graphite Films 111
3.5 XPS Spectroscopy 116
3.6 Thermal Gravimetric Analysis (TGA) of Graphite Film 117
3.6.1 TGA Tests on Reference Samples 117
3.6.2 TGA Tests on Experimental Sample by 10/1,5/600/250 Deposition 118
3.7 Solubility of Graphite Films Formed by PED Method on Metal Surfaces 120
3.8 Functional Properties of Graphite Films 122
3.8.1 Anti Socket 122
3.8.2 Antiblocking Properties of Graphite Films 123
3.8.3 Resistance to Wear for the Graphite Films 126
3.8.4 Corrosion Resistance of the Graphite Films 128
3.9 Conclusions 130
References 131
4 Structural and Physical Properties of ZnSxSe1-X Thin Films 135
Abstract 135
4.1 Introduction 135
4.2 Preparation of ZnSxSe1-X Thin Films by Thermal Evaporation Method in Vacuum, in Quasi-Closed Volume 136
4.3 The Structure and Surface Morphology of ZnSxSe1-X Thin Films 137
4.4 The Electrical Properties of ZnSxSe1-X Thin Films 140
4.5 The Optical Properties of ZnSxSe1-X Thin Films 146
4.6 The Luminescent Properties of ZnSxSe1-X Thin Films 153
4.7 Conclusions 160
References 161
5 Thin-Film Photovoltaic Devices Based on A2B6 Compounds 163
Abstract 163
5.1 Introduction 163
5.2 Historical Development of the CdS/CdTe Photovoltaic Devices 164
5.3 Technology Development Trends by Companies in CdS/CdTe Photovoltaic Market 166
5.4 Comparison of Moldova State University CdS/CdTe Photovoltaic Device with Manufacturing Target 167
5.5 Deposition Processing and Photovoltaic Device Fabrication 167
5.6 Analysis of Efficiency Loss Mechanism in MSU CdS/CdTe Photovoltaic Devices 170
5.6.1 Current-Voltage Characteristics of the CdS/CdTe Photovoltaic Devices 170
5.6.2 Quantum Efficiency 175
5.7 Characterization of ZnSe/CdTe Photovoltaic Devices 175
5.7.1 Morphological and Structural Studies of Glass/SnO2/ZnSe Interface 175
5.7.2 Optical Properties of ZnSe Thin Films Deposited on SnO2/Glass Substrates 181
5.7.3 Current-Voltage Characteristics of the ZnSe/CdTe Photovoltaic Devices 183
5.8 Comparison of CdTe Photovoltaic Devices with Different Buffer Layers 186
5.9 Photovoltaic Devices Based on TiO2/CdTe and TiO2/CdSe Structures 187
5.9.1 Morphological and Structural Studies of TiO2 Nanostructured Thin Films 188
5.9.2 XPS Analysis 191
5.9.3 Optical Properties 196
5.9.4 Electrical Properties 199
5.10 TiO2/p-CdTe and TiO2/n-CdSe Photovoltaic Devices 200
5.11 Conclusions 202
Acknowledgments 203
References 204
Part IIMagnetic Nanomaterials for Spintronic andSensoric Applications 207
6 Engineering the Magnetoelectric Response in Piezocrystal-Based Magnetoelectrics: Basic Theory, Choice of Materials, Model Calculations 208
Abstract 208
6.1 Introduction 209
6.1.1 The Magnetoelectric Effect 209
6.1.2 Magnetoelectric Composites 210
6.2 Theory of the Magnetoelectric Effect 218
6.2.1 Piezoelectricity and Magnetostriction 218
6.2.2 Presentation of the Averaging Quasi-Static Method 221
6.2.3 Estimation of the Quasi-Static Transversal ME Voltage Coefficients in Magnetostrictive/Piezocrystalline/Magnetostrictive Tri-Layers 228
6.3 Conclusions 237
Acknowledgments 238
References 238
7 Dynamic Measurements of Magnetoelectricity in Metglas-Piezocrystal Laminates 246
Abstract 246
7.1 Introduction 247
7.2 Magnetoelectric Measurement Techniques 249
7.2.1 Dynamic Magnetoelectric Technique 249
7.2.2 Experimental Dynamic Magnetoelectric Measurement Setup 253
7.3 Experimental Results 261
7.3.1 Comparative Study of the Direct and Converse Magnetoelectric Effects in Tri-Layered Composites of Metglas with LiNbO3 and PMN-PT Single Crystals 261
7.3.2 Comparison of the Anisotropic Magnetoelectric Effects in Tri-Layered Composites of Metglas with LiNbO3 and GaPO4 Single Crystals 269
7.4 Conclusions 279
Acknowledgments 280
References 280
8 Peculiarities of Physical Properties of Semimagnetic Semiconductors and Their Practical Application 285
Abstract 285
8.1 Introduction 285
8.2 Structure and Parameters of the Energy Bands 286
8.3 Electrical Properties of Hg1–xMnxTe and Hg1–x–yCdxMnyTe Semimagnetic Semiconductors 291
8.4 Photoelectrical Properties 296
8.4.1 Photoelectrical Properties of Hg1–xMnxTe and Hg1–x–yCdxMnyTe in the Absence of Magnetic Field 297
8.4.2 Photoelectrical Properties in a Magnetic Field 299
8.5 Photoluminescence Properties 302
8.5.1 Photoluminescence Properties in the Absence of Magnetic Field 302
8.5.2 Photoluminescence Properties in a Magnetic Field 303
8.6 Magneto-Optical Properties 308
8.7 ODMR in Semimagnetic Semiconductors. Optical Orientation 312
8.8 Photoreceivers Based on Hg1–xMnxTe, Hg1–x–yCdxMnyTe 313
8.9 Conclusions 313
References 314
9 Cobalt/Cobaltoxide Exchange Bias System for Diluted Ferromagnetic Alloy Films in Superconducting Spin-Valves 318
Abstract 318
9.1 Introduction 318
9.2 Sample Preparation and Characterization 320
9.3 Results of Magnetic Measurements and Discussion 323
9.4 Conclusion 327
Acknowledgments 327
Appendix 327
References 328
Part IIINanostructured and Composite Materials 331
10 Local Ordering at the Interface of the TiO2-WO3 Bi-Layers 332
Abstract 332
10.1 Introduction 332
10.2 Materials and Methods 334
10.3 Results and Discussion 335
10.3.1 XRD Analysis 335
10.3.2 XPS Analysis 336
10.3.3 Ti K-Edge XANES 338
10.3.4 EXAFS Measurements 339
10.3.4.1 Ti Environment 339
10.3.4.2 W Environment 340
10.3.5 XPS Analysis of the Interface 343
10.4 Conclusions 344
Acknowledgements 345
References 345
11 Crystalline Structure and Surface Morphology of AIIIBVI Type Lamellar Semiconductor Nanocomposites Obtained by Heat Treatment in Cd and Zn Vapor 347
Abstract 347
11.1 Introduction 347
11.2 Growth of Single Crystals of AIIIBVI Lamellar Compounds 349
11.3 Crystal Structure of GaS, GaSe, GaTe and InSe Single Crystals 350
11.4 Electrical Properties of the AIIIBVI Compounds (GaS, GaSe, InSe, and GaTe) Undoped and Doped with Group I, II and IV Elements 356
11.4.1 Electrical Properties of AIIIBVI Compounds 356
11.4.2 Structure and Some Physical Properties of Cd and Zn Chalcogenides Thin Films 360
11.5 Crystal Structure and Composition of the Material Obtained by Treatment in Zn Vapors of GaS, GaSe, GaTe and InSe Lamellar Single Crystals 360
11.5.1 Crystal Structure and the Morphology of the Surface and Interface of the Composite Obtained by Heat Treatment of Single Crystal GaS Lamellas in Cd and Zn Vapors 363
11.5.2 The Crystal Structure and the Surface Morphology of Nanolamellar GaSe–Intrinsic Oxide Composites and Composites Prepared by Heat Treatment of ?–GaSe Single Crystal Plates in Cd and Zn Vapors 367
11.5.3 Crystal Structure and the Surface Morphology of the Interface Between the Packets of the Composite Obtained by Heat Treatment of GaTe Single–Crystal Lamellas in Cd and Zn Vapors 379
11.5.4 Crystal Structure and the Morphology of the Surface and Interfaces Between the Packets of the Composite Prepared by Heat Treatment of InSe Single-Crystal Lamellas in Cd and Zn Vapors 386
11.6 Conclusions and Generalities 390
References 391
12 Optical and Photoelectric Properties of GaS, GaSe, GaTe and InSe Semiconductors and Nanocomposites Obtained by Heat Treatment in Cd and Zn Vapor 394
Abstract 394
12.1 Introduction 395
12.2 Optical and Photoluminescence Properties of Oxide—AIIIBVI Structures 395
12.3 Dispersion of the n? and n|| Refractive Indices 397
12.4 Light Absorption in Undoped GaSe, GaS, GaTe and InSe Single Crystals, Doped and Intercalated with Cd and Zn 399
12.4.1 Absorption at the Edge and Depth of Fundamental Band (h? ? Eg) 399
12.4.2 Light Absorption of GaSe and GaSe Doped with Cd in the Region of h? lessthan Eg 417
12.5 Photoelectrical Properties of Nanolamellar Structures with GaS, GaSe, GaTe and InSe Semiconductors 419
12.5.1 Photosensitive Elements on GaTe Semiconductor 419
12.5.2 GaSe–CdSe Heterojunctions 419
12.5.3 InSe–CdSe Heterojunctions 422
12.6 Conclusions and Generalities 423
References 424
13 Photoluminescence of Nanocomposites Obtained by Heat Treatment of GaS, GaSe, GaTe and InSe Single Crystals in Cd and Zn Vapor 427
Abstract 427
13.1 Introduction 427
13.2 Photoluminescence of Nanocomposites with GaS Lamellar Semiconductors 428
13.2.1 Undoped GaS and GaS Doped with Mn 428
13.2.2 GaS Intercalated with Zn from Vapor Phase 431
13.2.3 GaS Intercalated with Cd from Vapor Phase 433
13.3 Photoluminescence of Nanocomposites with GaSe Lamellar Semiconductors 433
13.4 Photoluminescence of Nanocomposites with GaTe Lamellar Semiconductors 448
13.5 Photoluminescence of Nanocomposites with InSe Lamellar Semiconductors 451
13.5.1 InSe 451
13.5.2 InSe Intercalated with Cd 452
13.5.3 InSe Intercalated with Zn 453
13.6 Conclusions and Generalities 456
References 457
14 Nanoreliefs Obtained by Various Machining Methods 459
Abstract 459
14.1 Introduction 459
14.2 Possibilities of Characterizing Nanoasperities/Nanoreliefs 461
14.3 Nanoreliefs Obtained by Mechanical Processes 463
14.3.1 General Aspects Concerning the Cutting Process and Its Capacity to Generate Nanoreliefs 463
14.3.2 Nanoreliefs Obtained by Turning 464
14.3.3 Nanoreliefs Obtained by Abrasive Processes 468
14.4 Nanoreliefs Obtained by Electrochemical Processes 473
14.5 Nanoreliefs Obtained by Thermal Machining Processes 476
14.6 Nanoreliefs Obtained by Hybrid Machining Processes 478
14.7 Conclusions 482
References 482
15 Template Assisted Formation of Metal Nanotubes 484
Abstract 484
15.1 Introduction 484
15.2 Porous Templates for Nanofabrication 485
15.3 Production of Metal Nanotubes in Ion-Track Membranes 490
15.4 Metal Nanotubes in Porous Alumina Templates 493
15.5 Semiconductor-Metal Nanocomposites on the Basis of Metal Nanotubes Deposited in Semiconductor Templates 501
15.6 Applications 504
15.7 Conclusions 512
References 514
16 Thermal Conductivity of Segmented Nanowires 518
Abstract 518
16.1 Introduction 518
16.2 Phonons in Segmented Nanowires 520
16.2.1 Face-Centered Cubic Cell Model of Lattice Dynamics in Bulk Crystals 521
16.2.2 Born-von Karman Model of Lattice Dynamics in Bulk Crystals 523
16.2.3 Lattice Dynamics in Segmented Nanowires 524
16.3 Phonon Engineered Heat Conduction of Segmented Nanowires 529
16.4 Conclusions 539
Acknowledgement 539
References 539
17 THz Devices Based on Carbon Nanomaterials 543
Abstract 543
17.1 Introduction 543
17.2 Graphene Antennas at THz Frequencies 549
17.3 THz Generation Based on Graphene 553
17.4 THz Detection Based on Graphene and Carbon Nanotubes 555
17.5 Conclusions 557
References 558
18 Abrasive Flow Machining 560
Abstract 560
18.1 Introduction 560
18.2 Elements of Technological System at Abrasive Flow Machining 561
18.3 Conceptual Design of the AFM Equipment 562
18.4 Detailed Design of the AFM Equipment 564
18.5 Experimental Results 570
18.6 Conclusions 575
References 576
Index 578
| Erscheint lt. Verlag | 2.4.2016 |
|---|---|
| Reihe/Serie | NanoScience and Technology | NanoScience and Technology |
| Zusatzinfo | XXIV, 576 p. 364 illus., 296 illus. in color. |
| Verlagsort | Cham |
| Sprache | englisch |
| Themenwelt | Naturwissenschaften ► Physik / Astronomie |
| Technik ► Maschinenbau | |
| Schlagworte | A2B6 thin-film photovoltaic devices • carbon nanomaterial THz devices • diluted ferromagnetic alloy films • formation of metal nanotubes • graphite films • magnetic nanomaterials for spintronics • magnetoelectric effects • nano-electronics • nanostructured and composite materials • oxide and hydroxide films • photo-catalysis • photoluminescence of nanocomposites • Semimagnetic semiconductors • template-assisted nanotechnologies • Thin-Film Photovoltaics • ZnSxSe1-x thin films |
| ISBN-10 | 3-319-30198-5 / 3319301985 |
| ISBN-13 | 978-3-319-30198-3 / 9783319301983 |
| Informationen gemäß Produktsicherheitsverordnung (GPSR) | |
| Haben Sie eine Frage zum Produkt? |
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