Field Effect Transistors (eBook)

P. Suveetha Dhanaselvam, K. Srinivasa Rao, Shiromani Balmukund Rahi, Dharmendra Singh Yadav (Herausgeber)

eBook Download: EPUB

2025
985 Seiten
Wiley-Scrivener (Verlag)
978-1-394-24848-3 (ISBN)

Infos

Field Effect Transistors is an essential read for anyone interested in the future of electronics, as it provides a comprehensive yet accessible exploration of innovative semiconductor devices and their applications, making it a perfect resource for both beginners and seasoned professionals in the field.

Miniaturization has become the slogan of the electronics industry. Field Effect Transistors serves as a short encyclopedia for young minds looking for solutions in the miniaturization of semiconductor devices. It explores the characteristics, novel materials used, modifications in device structure, and advancements in model FET devices. Though many devices following Moore's Law have been proposed and designed, a complete history of the existing and proposed semiconductor devices is not available. This book focuses on developments and research in emerging semiconductor FET devices and their applications, providing unique coverage of topics covering recent advancements and novel concepts in the field of miniaturized semiconductor devices. Field Effect Transistors is an easy-to-understand guide, making it excellent for those who are new to the subject, giving insight and analysis of recent developments and developed semiconductor device structures along with their applications.

P. Suveetha Dhanaselvam, PhD, is a professor in the Department of Electronics and Communication at Velammal College of Engineering and Technology, Madurai, India, with over 21 years of teaching experience. She has published papers in over 28 reputed journals and 65 international conferences, as well as two books, numerous book chapters, and a patent. Additionally, she serves as a reviewer for several journals and works on funded projects. She has produced two Doctorates and five are pursuing their PhD under her guidance.

Srinivasa Rao Karumuri, PhD, is a professor and the head of the VLSI-MEMS Research Center, Department of Electronics and Communication Engineering at the Koneru Lakshmaiah Education Foundation(Deemed to be University), Guntur, Andhra Pradesh, India. He also acts as a reviewer for several IEEE Transactions Journals and universities' graduate and post-graduate programs and is working on a project for the Indian government's Science and Engineering Board. Additionally, he has published over 250 international research publications and presented over 65 international conference papers and guided more than 10 PhD Scholars in the field of VLSI and Microelectronics domain.

Shiromani Balmukund Rahi, PhD, is an assistant professor at University School of Information and Communication Technology (SoICT) Gautam Buddha University Greater Noida, Uttar Pradesh, India. He has successfully published 25 international research publications, four conference proceedings and 35 book chapters, in addition to presenting his research at various international conferences and workshops. In addition to his original work, he has edited 10 books and received awards for his work as an editor and reviewer for several international journals. He has also worked as post-doctoral researcher in Korea Military Academy Seoul, Republic of Korea.

Dharmendra Singh Yadav, PhD, is an assistant professor in the Department of Electronics and Communication Engineering at the National Institute of Technology, Kurukshetra, Haryana, India. He has published over 60 publications internationally in addition to several reputable books and book chapters. His current research interests include very large scale integration design, device modeling, and AI and machine learning in semiconductor devices and circuit-based applications in research.

Textauszug

1
Classical MOSFET Evolution: Foundations and Advantages

S. Amir Ghoreishi1* and Samira Pahlavani2

1Department of Materials Science and Engineering, Arizona State University, Tempe, AZ, USA

2Electrical and Computer Engineering Department, Semnan University, Semnan, Iran

Abstract

The realm of MOSFET innovations within the dynamic landscape of semiconductor technology is explored in this chapter. The complexities of these technological marvels through pioneering designs like nanosheet field-effect transistor (FET), negative-capacitance (NC) FET, junction less metal-oxide-semiconductor FET (MOSFET), NC tunnel FET (TFET), tunnel FET, Fe MOSFET gate-all-around (GAA), and various others are uncovered. The aim is to provide an understanding of these transistors, showcasing their attributes and applications. Junction less MOSFETs, a development in semiconductor technology, are started with. The principles, characteristics, and advancements of these innovations are delved, illustrating how they have redefined the landscape of device design. Next, TFETs, where tunneling phenomena are used for low-power operations, are examined. The workings of TFETs and their potential in electronics are uncovered. Nanosheet FETs and nanowire FETs, as well as nanoscale wonders, are then investigated. Their features, including their control over current flow, leading to enhanced performance, are studied. The short-channel effect in nanoscale transistors and strategies to mitigate it are also addressed. FinFETs, known for their three-dimensional structure, are focused on. Their principles and their role in semiconductor technology, especially in computing applications, are learned. GAA FETs are scrutinized, dissecting their architecture and their contributions to performance and efficiency. The landscape of these modern FETs is navigated, highlighting their design, characteristics, and applicability in electronics. This exploration, including insights into nanoscale transistors and the short-channel effect, serves as a resource for engineers, researchers, and enthusiasts seeking to harness these devices. By the end, the principles of these transistors and their role in electronic technologies will be understood by readers.

Keywords: Field-effect transistors, short-channel effect, FinFETs, classical MOSFET, dual-gate MOSFET

1.1 Introduction of Classical MOSFET

Julius Edgar Lilienfeld laid the foundation for the concept of MOSFET fabrication in 1926 [1], suggesting a three-electrode structure using copper-sulfide semiconductor material. While Lilienfeld’s exploration sparked the idea of a new transistor type, the MOSFET, as we know it today, the concept was introduced by William Shockley, John Bardeen, and Walter Houser Brattain. The defect of this structure was the traps located on the surface of the semiconductor, which interfered with the mobility of electrons. Growing a layer of silicon dioxide on silicon wafer surface was the solution which Carl Frosch and L. Derick accidentally achieved in 1955. This layer acts as an insulator, preventing the diffusion of dopants into the silicon wafer. According to this achievement other scientists such as M. Atalla demonstrated that silicon dioxide plays a key role in solving the surface problems of wafers [2].

Figure 1.1 A simple structure of a MOSFET.

Special crystal clear, the metal-oxide-semiconductor field-effect transistors (MOSFETs) because of their special specifics and high performance not only have revolutionized in the electronic world but also have opened a new window in modern technology to engineers. They are the prevalent type of field-effect transistor (FET), used widespread in electrical devices ranging from memory to smartphone. MOSFETs are widely applied in both analog and digital circuits and are considered the most vital component of integrated circuits. They may be viewed as electronic switches and amplifiers, wherein the flow of current between the source and drain terminals is regulated by the voltage applied to the gate terminal. Figure 1.1 demonstrates a basic structure of classic MOSFETs. They consist of three terminals, entitled gate, drain, and source.

1.1.1 The Advantages of MOSFET

There are a variety of advantages for MOSFETs that can be mentioned. The milestone of MOSFETs is their high speed and low power consumption when they act as a switch. Furthermore, they possess reasonable efficiency in high frequency. Today, because of growing usage of portable electrical devices like smartphones and laptops, demand for fabricating electronics devices with small scale has increased. Manufacturing in small dimension is another ability of MOSFETs, which paves the way for producing semiconductor chips with numerous numbers of them. In terms of thermal stability, a wide temperature range is defined for them to operate accurately. This characteristic is crucial.

1.2 Dual-Gate MOSFET

According to a number of previous research that have been conducted [3], the classical MOSFET represents some restrictions when its gate length is shrunk under 30 nm. Enormous investigations have been carried out to reduce this limitation, and new architectures have been proposed during recent years [4, 5]. The dual-gate (DG) transistors are the most popular devices that maintain their characteristics when their gate-length is 30 nm [6]. Dual-gate MOSFET is a kind of MOSFET, consisting of two gate terminals that are electrically isolated from each other. These gates are embedded one after other along channel length and affect current, flowing among drain and source, thus providing better electrostatic control on channel. The increasing demand for the supply of this useful semiconductor device has prompted many well-known producers to fabricate them, in which Motorola, NXP Semiconductors, and Hitachi are pioneers in the production of these state-of-art transistors. Figures 1.2 and 1.3 illustrate circuit symbol of P-channel and N-channel MOSFET along with device structure of DG MOSFET, respectively.

The DG MOSFET consists of a source, a drain, and two gates. These gates are separated from the channel by oxide layers, with a metal layer positioned above them. As a classical MOSSFET, carriers enter the devices from source and leave them from drain terminal. Additionally, the gate regulates the flow of carriers. Among the recent high-technology MOSFETs, this model is like the classical model. However, there are several differences between them. Firstly, the second gate fortifies their abilities for controlling the channel. Secondly, DG MOSFET has two work modes based on their gate’s situation. When both gates are activated, the DG MOSFET functions like a single-gate device. However, when only one gate is activated, the device operates in a mode referred to as “substrate biasing.”

Figure 1.2 Electronic symbol of DG MOSFET.

Figure 1.3 Dual-gate MOSFET structure.

1.2.1 Advantage

Compared to the single-gate form, double-gate MOSFET has shown better performance in some electrical aspects.

1.2.1.1 Scalability

The most important factor preventing MOSFETs from scaling down is the short-channel effect. Because two gates control the channel and its current, this arrangement results in less short-channel effects, which provides greater flexibility for scaling and lower subthreshold current.

1.2.1.2 Improvement of Gain

In addition, the unique structure of DG MOSTFETs boosts the gain of them. The point is that, when they work in substrate biasing mode, situation that only one gate is on, turned-off gate creates depletion region. This region acts as a barrier against the device current flow to restrict it.

1.2.1.3 Low-Power Consumption

Another advantage of DG MOSFETs is consuming lower power. If a gate is off, then the channel length and gate leakage current will be reduced that contributes to power saving.

1.2.1.4 Better ION/IOFF

Previous studies simulated their proposed models and reported that ION/IOFF is improved in DG MOSFETs [7].

1.2.1.5 Higher Switching Speed

The body of DG MOSFETs significantly decreases junction capacitances of drain and source. Hence, reducing the junction capacitance can enhance the switching speed of DG MOSFETs. Plus, the amount of feedback capacitance between the input and output of the devices can be significantly reduced by using the second control terminal.

1.2.2 Application

The characteristics of DG MOSFETs make them appropriate to be used in various applications, which will be mentioned.

1.2.2.1 RF Mixer

Radio frequency (RF) mixer consists of two inputs: local oscillator (LO) and RF. The DG MOSFET architecture fulfills the requirement of RF mixer as it has two inputs for the LO and RF signal. As demonstrated in Figure 1.4, commonly, gate 1 is allocated to RF signal, and the second signal is connected to gate 2. The channel current is regulated by two input signals, and the mixer generates a frequency based on its specific needs.

1.2.2.2 RF Amplifier

The most application of DG MOSFETs is in RF circuits especially in RF amplifiers. This type of transistors can operate efficiently at high frequency, due to elimination of unwanted capacitive and short-channel effects. Every single DG MOSFET has the ability to be converted to a two-stage amplifier, known as cascode structure. Figure 1.5 shows a...

Produkt-Details

• Erscheint lt. Verlag: 11.3.2025
• Sprache: englisch
• Themenwelt: Technik ► Elektrotechnik / Energietechnik
• Themenwelt: Wirtschaft
• ISBN-10: 1-394-24848-2 / 1394248482
• ISBN-13: 978-1-394-24848-3 / 9781394248483