Diode Laser Materials and Devices - A Worldwide Market and Technology Overview to 2005 (eBook)
528 Seiten
Elsevier Science (Verlag)
978-0-08-053043-7 (ISBN)
This report examines the development of the diode laser industry over a six-year period, 2000 to 2005, incorporating analysis of trends in markets, technologies and industry structure. It is designed to provide key information to users and manufacturers of substrates, epitaxial wafers (epiwafers) and devices. The coverage includes components, laser diodes, and the semiconducting (SC) wafers and epiwafers on which most of these devices are made.
The geographical coverage of the report includes North America, Japan and Europe, which together will account for over 90% of the production and consumption of diode laser materials and devices over the next five years.
However, many other countries have activities in this field including South-East Asia (Taiwan, South Korea, Singapore, Malaysia etc), China, India, Australia and Eastern Europe (Russia, Poland, Hungary, the Czech Republic) amongst others. Activities in these countries are commented on in the text where relevant, but are not quantified in the market data.
Chapter 1 is an introduction to the market study. Chapter 2 contains an executive summary. Chapter 3 overviews materials markets. The size, quality, and particularly the price, of substrates and wafers are key factors in determining the ability of companies to produce competitive laser products. Chapter 3 also examines trends in materials technologies for laser diodes, the impact of the device markets on wafer demand, and the main suppliers. This chapter introduces the semiconductor materials that are presently or will likely become important to the fabrication of diode laser devices. The principal distinguishing properties of these materials are explained with reference to their application. Chapter 4 chapter examines the basic application sectors for laser diode devices as well as the basic commercial opportunities, changes and forces acting within each sector. The chapter also examines the market for the basic types of device as well as the promising newer types. For each type of device, market data and forecasts are provided and future prospects described.
The application data are presented for the following industrial groups: • Automotive • Computers • Consumer • Industrial • Military and Aerospace • Telecommunications • Others A full 5-year forecast and analysis is provided by application and region. Chapter 5 is a technology overview. In this chapter a background and overview of developments in the principal technological R&D and production processes for devices is provided. The main focus is on the most important enabling technology for the production of the present and future generations of laser diodes and related devices.
This process is crystal growth and involves the following sequence: • Bulk growth of single crystals • Epitaxial growth of semiconductor single crystal layers • Ion implantation • Device fabrication, ie gate and contact formation, etc • Packaging & test Chapter 6 profiles substrate suppliers, epiwafers suppliers and merchant and captive producers of GaAs devices. Chapter 7 lists universities and selected industrial labs involved in the areas of diode laser research. Chapter 8 is a directory of suppliers. Chapter 9 provides acronyms and exchange rates. For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.
This report examines the development of the diode laser industry over a six-year period, 2000 to 2005, incorporating analysis of trends in markets, technologies and industry structure. It is designed to provide key information to users and manufacturers of substrates, epitaxial wafers (epiwafers) and devices. The coverage includes components, laser diodes, and the semiconducting (SC) wafers and epiwafers on which most of these devices are made. The geographical coverage of the report includes North America, Japan and Europe, which together will account for over 90% of the production and consumption of diode laser materials and devices over the next five years. However, many other countries have activities in this field including South-East Asia (Taiwan, South Korea, Singapore, Malaysia etc), China, India, Australia and Eastern Europe (Russia, Poland, Hungary, the Czech Republic) amongst others. Activities in these countries are commented on in the text where relevant, but are not quantified in the market data. Chapter 1 is an introduction to the market study. Chapter 2 contains an executive summary. Chapter 3 overviews materials markets. The size, quality, and particularly the price, of substrates and wafers are key factors in determining the ability of companies to produce competitive laser products. Chapter 3 also examines trends in materials technologies for laser diodes, the impact of the device markets on wafer demand, and the main suppliers. This chapter introduces the semiconductor materials that are presently or will likely become important to the fabrication of diode laser devices. The principal distinguishing properties of these materials are explained with reference to their application. Chapter 4 chapter examines the basic application sectors for laser diode devices as well as the basic commercial opportunities, changes and forces acting within each sector. The chapter also examines the market for the basic types of device as well as the promising newer types. For each type of device, market data and forecasts are provided and future prospects described. The application data are presented for the following industrial groups: * Automotive * Computers * Consumer * Industrial * Military and Aerospace * Telecommunications * Others A full 5-year forecast and analysis is provided by application and region. Chapter 5 is a technology overview. In this chapter a background and overview of developments in the principal technological R&D and production processes for devices is provided. The main focus is on the most important enabling technology for the production of the present and future generations of laser diodes and related devices. This process is crystal growth and involves the following sequence: * Bulk growth of single crystals * Epitaxial growth of semiconductor single crystal layers * Ion implantation * Device fabrication, ie gate and contact formation, etc * Packaging & test Chapter 6 profiles substrate suppliers, epiwafers suppliers and merchant and captive producers of GaAs devices. Chapter 7 lists universities and selected industrial labs involved in the areas of diode laser research. Chapter 8 is a directory of suppliers. Chapter 9 provides acronyms and exchange rates.
Front Cover 1
Diode laser Materials & Devices: A Worldwide Market &
Copyright Page 3
Contents 4
List of Tables 10
List of Figures 14
Chapter 1. Introduction 18
1.1 Report Structure 18
1.2 Products 19
1.3 Markets 20
1.4 Regions 20
1.5 Research Background 20
Chapter 2. Executive Summary 22
2.1 Introduction 22
2.2 Diode Laser Substrate Markets 25
2.3 Diode Laser Epitaxial Wafer Markets 27
2.4 Diode Laser Device Market by Application 30
2.5 Diode Laser Application Market Forecast 33
2.6 Market by Application Sector 36
Chapter 3. Diode Laser Materials Markets 42
3.1 Forecast Summary 42
3.2 Introduction 42
3.3 The World Market For Substrates 2000–05 45
3.4 World Substrate Supplier Situation 59
3.5 Merchant GaAs Epiwafer Markets 60
Chapter 4. Application Market Overview 84
4.1 Introduction 84
4.2 Diode Lasers in the Total Laser Marketplace 86
4.3 Worldwide Market for Diode Lasers 86
4.4 The Worldwide Diode Laser Business 88
4.5 Telecommunications Markets for Diode Lasers 98
4.6 Consumer Markets for Diode Lasers 121
4.7 Computer Markets for Diode Lasers 132
4.8 Industrial Markets for Diode Lasers 142
4.9 Military/Aerospace Markets for Devices 157
4.10 Automotive Markets for Devices 163
4.11 Other Markets for Diode Lasers 170
Chapter 5. Technology Overview 174
5.1 Introduction 174
5.2 Crystal Growth 176
5.3 Crystal Growth Technologies 178
5.4 Substrates 184
5.5 Epitaxial Growth 190
5.6 In Situ Monitoring 209
5.7 Device Processing 213
Chapter 6. Company Profiles 224
6.1 Introduction 224
6.2 Agere Systems 225
6.3 Agilent Technologies 229
6.4 AIXTRON 231
6.5 Alcatel Optronics 235
6.6 Alfalight 238
6.7 American Xtal Technology 239
6.8 ATMI Epitaxial Services 243
6.9 Coherent 246
6.10 Cree Inc 249
6.11 E20 Communications 251
6.12 Eastman Kodak 252
6.13 EMCORE 253
6.14 Epichem 256
6.15 Excelight 258
6.16 Freiberger Compound Materials 261
6.17 Fujitsu 262
6.18 Furukawa 265
6.19 Hamamatsu 268
6.20 Hitachi 270
6.21 Honeywell 272
6.22 Infineon 274
6.23 IQE 277
6.24 Japan Energy 280
6.25 JDS Uniphase 281
6.26 Matsushita 285
6.27 Mitsubishi 289
6.28 NEC 292
6.29 Nichia 296
6.30 Nortel 298
6.31 Oki 301
6.32 PerkinElmer 303
6.33 Picogiga 305
6.34 Princeton Lightwave 306
6.35 RIBER 308
6.36 ROHM 310
6.37 Sanyo 314
6.38 Sharp 317
6.39 Sony 320
6.40 Spectra-Physics 323
6.41 Thales Optics 327
6.42 ThermoVG Semicon 330
6.43 Toshiba 332
6.44 Toyoda Gosei 334
6.45 Xerox 336
6.46 Zarlink Semiconductor 338
Chapter 7. Geographical List of Universities and Selected Industrial Labs 342
7.1 Introduction 342
7.2 Australia 343
7.3 Belgium 345
7.4 Canada 345
7.5 China 347
7.6 Finland 348
7.7 France 349
7.8 Germany 352
7.9 Greece 359
7.10 India 359
7.11 Ireland 359
7.12 Italy 360
7.13 Japan 361
7.14 Korea 371
7.15 The Netherlands 374
7.16 Poland 375
7.17 Russia 376
7.18 Singapore 377
7.19 South Africa 378
7.20 Spain 378
7.21 Sweden 379
7.22 Switzerland 380
7.23 Taiwan 381
7.24 Tunisia 383
7.25 UK 383
7.26 USA 392
Chapter 8. Directory of Leading Suppliers 416
Chapter 9. Appendices 528
9.1 Exchange Rates 528
9.2 Mergers and Acquisitions 529
9.3 Joint Ventures and Agreements 531
9.4 Alphabetical List of Acronyms 534
Erratum 546
Erscheint lt. Verlag | 20.12.2001 |
---|---|
Sprache | englisch |
Themenwelt | Technik ► Elektrotechnik / Energietechnik |
Wirtschaft ► Betriebswirtschaft / Management ► Unternehmensführung / Management | |
ISBN-10 | 0-08-053043-5 / 0080530435 |
ISBN-13 | 978-0-08-053043-7 / 9780080530437 |
Haben Sie eine Frage zum Produkt? |
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