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High Current ESD

Physics and Design
Buch | Hardcover
250 Seiten
2026
Cambridge University Press (Verlag)
978-1-107-08905-1 (ISBN)
CHF 119,95 inkl. MwSt
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Synthesizing experience from industry and academia, this book addresses practical ESD design principles and real-world reliability challenges in advanced CMOS, FinFETs, GaN HEMTs, carbon nanostructures and TFT technologies. Ideal for professional and academic engineers working in device physics and design.
Synthesizing experience from industry and academia, this book offers a comprehensive and nuanced perspective on the Physics of Electrostatic Discharge (ESD) phenomena in a range of semiconductor device technologies, illustrating robust design practices. Starting with fundamental insights into high-current ESD behaviour in semiconductor devices, it gradually builds toward practical design principles and real-world reliability challenges in advanced CMOS, FinFETs, GaN HEMTs, carbon nanostructures and TFT technologies. Device-level physics and practical design implications are explored throughout, bridging the gap between deep theoretical understanding and real-world design constraints. Including unique simulation techniques alongside experimental results, this book thoroughly explores core ESD design principles. Including multiple curated case studies, this book will equip readers with all the tools needed to address current ESD design challenges and embrace covers the challenges of the future. A reliable and thought-provoking exploration, ideal for graduate students, industry professionals and researchers working in device physics, design, and reliability.

Charvaka Duvvury is a Texas Instruments Fellow-Emeritus and a Life Fellow of the IEEE. He received the Education Award from IEEE-EDS and the Outstanding Contributions Award from the EOS/ESD Association. He is a co-founder and co-chair of the Industry Council on ESD Target Levels. Harald Gossner is a Senior Principal Engineer at Intel and IEEE Fellow in the field of ESD. He is the recipient of the outstanding achievement award of EOS/ESD Association for his contributions to the field of ESD. He is the cofounder and co-chair of the Industry Council on ESD Target Levels. Mayank Shrivastava is the Professor & Chair of the Department of Electronic Systems Engineering at the Indian Institute of Science Bangalore. He is also co-founder of a deep-tech semiconductor startup, is an internationally recognized leader in semiconductor technology with over 275 publications, over sixty patents, and more than twenty-five prestigious awards.

Preface; 1. Introduction; 2. ESD characterization methods; 3. Process technology impact; 4. Design of ESD protection devices; High current ESD behaviour; 6. Advance IO ESD design; 7. ULSI CMOS technologies; 8. ESD basics of AIGaN/GaN HEMTs; 9. Basics of 1D/2D materials, thin film transistors and their ESD failures; 10. Challenges in novel packaging technologies.

Erscheint lt. Verlag 31.7.2026
Verlagsort Cambridge
Sprache englisch
Themenwelt Technik Elektrotechnik / Energietechnik
ISBN-10 1-107-08905-0 / 1107089050
ISBN-13 978-1-107-08905-1 / 9781107089051
Zustand Neuware
Informationen gemäß Produktsicherheitsverordnung (GPSR)
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