Design and Characteristics of MOSFETs
Trans Tech Publications Ltd (Verlag)
978-3-0364-0915-3 (ISBN)
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This special edition comprehensively overviews state-of-the-art technologies for designing structures and analysing functional characteristics of SiC-based devices and integrated circuits, which, in modern conditions of scientific and technological progress, have wide applications in many engineering and manufacturing fields.
Preface
Matching Physical and Electrical Measurements (OBIC) to Simulation (FEM) on High Voltage Bipolar Diodes
Cost-Effective Design and Optimization of a 3300-V Semi-Superjunction 4H-SiC MOSFET Device
A Physics-Based SPICE Model for a SiС Vertical Power MOSFET
A Novel 'Ladder' Design for Improved Channel Density for 1.2kV 4H-SiC MOSFETs
Single-Event-Burnout in 1.2kV 4H-SiC Lateral RESURF Power MOSFET
Investigation of Advanced Hexagonal Layouts for 650 V SiC MOSFETs
A Novel Design of SiC High-Voltage Lateral PiN Diode for IC Application
Design and Simulation of Improved Future Generation 4H-SiC JFET-R Integrated Circuits for Prolonged 500 °C Operation
Optimizing Short Channel Designs in 1700 V 4H-SiC VDMOSFET
Fast High Current Sensing SMD Resistor Network Layout for Low Inductance Insertion
| Erscheinungsdatum | 25.09.2025 |
|---|---|
| Zusatzinfo | Illustrations |
| Verlagsort | Zurich |
| Sprache | englisch |
| Maße | 170 x 240 mm |
| Gewicht | 290 g |
| Themenwelt | Technik ► Elektrotechnik / Energietechnik |
| Technik ► Maschinenbau | |
| ISBN-10 | 3-0364-0915-7 / 3036409157 |
| ISBN-13 | 978-3-0364-0915-3 / 9783036409153 |
| Zustand | Neuware |
| Informationen gemäß Produktsicherheitsverordnung (GPSR) | |
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