Structural Defects in Silicon Carbide

Victor Veliadis, Arash Salemi (Herausgeber)

Buch | Softcover

88 Seiten

2025
Trans Tech Publications Ltd (Verlag)
978-3-0364-0917-7 (ISBN)

Titel nicht im Sortiment

Artikel merken

Special topic volume with invited peer-reviewed papers only

This special edition provides a focused overview of the state of the art in the areas of control, analysis of characteristics, and effect compensation of silicon carbide structure defects, highlighting the scientific foundations and technological solutions that underpin the development of high-quality SiC devices.

Preface
Deep-Ultraviolet Laser-Based Defect Inspection of Single-Crystal 4H-SiC and SmartSiCTM Engineered Substrates for High Volume Manufacturing
Study of In-Grown Micropipes in 200 mm 4H-SiC (0001) Epitaxial Substrate
Demonstration of Suppressing 1SSF Expansion Using Energy Filtered Ion Implantation
Analysis of Trap Centers Generated by Hydrogen Implantation in 4H-SiC Bonded Substrates
Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions with Silicon Energy-Filter for Ion Implantation
Formation Mechanism and Complex Faulting Behavior of a BPD Loop in 180 μm Thick 4H-SiC Epitaxial Layer
Evaluation of 4HSiC Epitaxial CVD Process on Different 200 mm Substrates for Power Device Applications
Characterization of Interface Trap and Mobility Degradation in SiC MOS Devices Using Gated Hall Measurements
Numerical Analysis of Correlation between UV Irradiation and Current Injection on Bipolar Degradation in PiN Diodes
Investigation on Bipolar Degradation Caused by Micropipe in 3.3 kV SiC-MOSFET
Suppression and Analysis of Bipolar Degradation in 4H-SiC PiN Diodes through Proton Implantation

Erscheinungsdatum	23.09.2025
Zusatzinfo	Illustrations
Verlagsort	Zurich
Sprache	englisch
Maße	170 x 240 mm
Gewicht	300 g
Themenwelt	Technik ► Elektrotechnik / Energietechnik
Themenwelt	Technik ► Maschinenbau
ISBN-10	3-0364-0917-3 / 3036409173
ISBN-13	978-3-0364-0917-7 / 9783036409177
Zustand	Neuware