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SiC Application and SiC Devices Reliability and Stability -

SiC Application and SiC Devices Reliability and Stability

Victor Veliadis, Arash Salemi (Herausgeber)

Buch | Softcover
134 Seiten
2025
Trans Tech Publications Ltd (Verlag)
978-3-0364-0916-0 (ISBN)
CHF 209,45 inkl. MwSt
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Special topic volume with invited peer-reviewed papers only
This special edition combines issues related to the reliability and stability of silicon carbide-based electronic devices with an analysis of engineering solutions for their applications in frontier technologies and extreme conditions, providing readers with a comprehensive overview of current advances and future directions of applications.

Preface
Chapter 1: Analysis of Device Reliability and Characteristic Stability
Dynamic Switching Energy Monitoring during Gate Switching Stress to Evaluate Performance Degradation in Hard Switching Electric Power Conversion Systems
TDDB and HTGB Study of SiC MOSFET with Excessive Channel Leakage
Optimization of Gate Oxide Screening Technology for Commercial SiC Discrete MOSFETs and Power Modules
Achieving Low Dit (~5×1010eV-1cm-2), Competitive JG (~ 5×10-10 A cm-2) Performance and Enhanced Post-Stress Flatband Voltage Stability Using Deposited Oxide
Investigation of Overcurrent Turn-Off Robustness of 1200 V SiC MOSFETs
Prospects and Challenges for SiC Power Devices in MMC-VSC-HVDC Applications
Dynamic Characterization and Robustness of SiС MOSFETs Based on SmartSiCTM Engineered Substrates
Device Performance and Reliability of SiC CMOS up to 400°C
Chapter 2: Quantum Applications, Sensors and Use in Space Engineering
SiC Avalanche Photodiodes - Crystal Orientation and Spatial Uniformity
Influence of Gold Nanoparticle Distribution on the Performance of Self-Powered Silicon Carbide Ultraviolet Photodetector
Fabrication of 4H-SiC Low Gain Avalanche Detectors (LGADs)
All Electrical Near-Zero Field Magnetoresistance Magnetometry up to 500°C Using SiC Devices
SiC in Space: Potential High-Power Application Survey
SiC Half-Bridge Modules to Improve Efficiency and Reduce Area of High-Power Motor Drives in Space
Latching Current Limiter for High-Power Distribution in Space Enabled by SiC N-MOSFET

Erscheinungsdatum
Zusatzinfo Illustrations
Verlagsort Zurich
Sprache englisch
Maße 170 x 240 mm
Gewicht 370 g
Themenwelt Technik Elektrotechnik / Energietechnik
Technik Maschinenbau
ISBN-10 3-0364-0916-5 / 3036409165
ISBN-13 978-3-0364-0916-0 / 9783036409160
Zustand Neuware
Informationen gemäß Produktsicherheitsverordnung (GPSR)
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