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High-Speed Heterostructure Devices - Patrick Roblin, Hans Rohdin

High-Speed Heterostructure Devices

From Device Concepts to Circuit Modeling
Buch | Softcover
728 Seiten
2006
Cambridge University Press (Verlag)
978-0-521-02423-5 (ISBN)
CHF 199,95 inkl. MwSt
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High-speed heterostructures are spearheading the drive toward smaller, faster and lower power devices. This book is a timely and comprehensive introduction to heterostructures, covering the underlying physics, modeling techniques and the latest devices, including MODFETs, HBTs and RTDs. Numerous homework exercises and a web link to MATLAB examples are included.
Fuelled by rapid growth in communications technology, silicon heterostructures and related high-speed semiconductors are spearheading the drive toward smaller, faster and lower power devices. High-Speed Heterostructure Devices is a textbook on modern high-speed semiconductor devices intended for both graduate students and practising engineers. This book is concerned with the underlying physics of heterostructures as well as some of the most recent techniques for modeling and simulating these devices. Emphasis is placed on heterostructure devices of the immediate future such as the MODFET, HBT and RTD. The principles of operation of other devices such as the Bloch Oscillator, RITD, Gunn diode, quantum cascade laser and SOI and LD MOSFETs are also introduced. Initially developed for a graduate course taught at Ohio State University, the book comes with a complete set of homework problems and a web link to MATLAB programs supporting the lecture material.

Preface; Acknowledgements; 1. Heterostructure materials; 2. Semiclassical theory of heterostructures; 3. Quantum theory of heterostructures; 4. Quantum heterostructure devices; 5. Scattering processes in heterostructures; 6. Scattering-assisted tunneling; 7. Frequency response of quantum devices from DC to infrared; 8. Charge control of the two-dimensional electron gas; 9. High electric field transport; 10. I-V model of the MODFET; 11. Small-and large-signal AC models for the long-channel MODFET; 12. Small-and large-signal AC models for the short-channel MODFET; 13. DC and microwave electrothermal modeling of FETs; 14. Analytical DC analysis of short-gate MODFETs; 15. Small signal AC analysis of the short-gate velocity-saturated MODFET; 16. Gate resistance and the Schottky-barrier interface; 17. MODFET high-frequency performance; 18. Modeling high-performance HBTs; 19. Practical high-frequency HBTs; Index.

Erscheint lt. Verlag 13.2.2006
Zusatzinfo 40 Tables, unspecified; 220 Line drawings, unspecified
Verlagsort Cambridge
Sprache englisch
Maße 170 x 245 mm
Gewicht 1115 g
Themenwelt Technik Elektrotechnik / Energietechnik
ISBN-10 0-521-02423-4 / 0521024234
ISBN-13 978-0-521-02423-5 / 9780521024235
Zustand Neuware
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