Devices for Integrated Circuits
Silicon and III-V Compound Semiconductors
Seiten
1998
John Wiley & Sons Inc (Verlag)
978-0-471-17134-8 (ISBN)
John Wiley & Sons Inc (Verlag)
978-0-471-17134-8 (ISBN)
A detailed, modern introduction to semiconductors made in silicon and III-V compounds. This book develops the device physics of pn junctions, bipolar transistors, Schottky barriers, MOS capacitors, and MOS field-effect transistors (MOSFETs).
This book develops the device physics of the Si and III-V compound semiconductor devices used in integrated circuits. Important equations are derived from basic physical concepts. The physics of these devices are related to the parameters used in SPICE. Terminology is intended to prepare students for reading technical journals on semiconductor devices.
This text is suitable for first-year graduate students and seniors in Electrical Engineering; graduate students in Material Science and Chemical Engineering, interested in semiconductor materials; Computer Science students interested in custom VLSI design; and professionals in the semiconductor industry.
This book develops the device physics of the Si and III-V compound semiconductor devices used in integrated circuits. Important equations are derived from basic physical concepts. The physics of these devices are related to the parameters used in SPICE. Terminology is intended to prepare students for reading technical journals on semiconductor devices.
This text is suitable for first-year graduate students and seniors in Electrical Engineering; graduate students in Material Science and Chemical Engineering, interested in semiconductor materials; Computer Science students interested in custom VLSI design; and professionals in the semiconductor industry.
H. Craig Casey is the author of Devices for Integrated Circuits: Silicon and III-V Compound Semiconductors, published by Wiley.
Integrated Circuit Family Tree
Electrons in Solids
Carrier Transport and Recombination
p-n Junctions: I-V Behavior
p-n Junctions: Reverse Breakdown and Junction Capacitance
Schottky-Barrier Devices
MOS Capacitors
MOS Field-Effect Transistors
Bipolar Transistors
Appendix I: Introduction to PSPICE
| Erscheint lt. Verlag | 18.12.1998 |
|---|---|
| Verlagsort | New York |
| Sprache | englisch |
| Maße | 195 x 243 mm |
| Gewicht | 1034 g |
| Themenwelt | Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik |
| Technik ► Elektrotechnik / Energietechnik | |
| ISBN-10 | 0-471-17134-4 / 0471171344 |
| ISBN-13 | 978-0-471-17134-8 / 9780471171348 |
| Zustand | Neuware |
| Informationen gemäß Produktsicherheitsverordnung (GPSR) | |
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