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Semiconductor Device Modeling with SPICE

Buch | Hardcover
479 Seiten
1993 | 2nd edition
McGraw-Hill Professional (Verlag)
978-0-07-002469-4 (ISBN)
CHF 115,20 inkl. MwSt
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This revised version explains the ins and outs of SPICE, plus new data on modelling advanced devices such as MESFETs, ISFETs, and thyristors. The book should help readers gain maximum value from SPICE, also covering both MOS and FET models.
SPICE (Software Program with Integrated Circuit Emphasis) is a powerful design aid that electronics engineers learn and is the world standard for circuit simulation. And when circuit designers are using the various versions of SPICE to simulate circuits prior to fabrication and accurately predict future performance, this guide could be a useful reference. This revised version explains the ins and outs of SPICE, plus gives new data on modelling advanced devices such as MESFETs, ISFETs, and thyristors. The book should help readers gain maximum value from SPICE, also covering both MOS and FET models. Step by step, it takes the reader through the modelling process, providing complete information on a variety of semiconductor devices for designing specific circuit applications. These include: Pn junction and Schottky diodes; bipolar junction transistor (BJT); junction field effect transistor (JFET); metal oxide semiconductor field effect transistor (MESFET); ion sensitive field effect transistor (ISFET); and semiconductor controlled rectifier (SCR-thyristor).
Given the immense and growing acceptance of SPICE, this revision should appeal to the audience of engineers, technicians, and students who use this design program.

Paolo Antognetti is a professor and chairman of the department of electronic engineering (DIBE) at the University of Genova. His extensive background in semiconductor modeling includes teaching and research positions at Stanford University and MIT. He has contributed to more than fifty papers in the field of electronics and VSLI design and simulation. He has edited several books, including Power Integrated Circuits: Physics, Design, and Applications, also published by McGraw-Hill.

PN-Junction Diode and Schottky Diode.Bipolar Junction Transistor (BJT).Junction Field-Effect Transistor (JFET).Metal Oxide-Semiconductor Transistor (MOST).BJT Parameter Measurements.MOST Parameter Measurements.Noise and Distortion.The SPICE Program.Metal-Semiconductor Field-Effect Transistor, Ion-Sensitive Field-Effect Transistor, and Semiconductor-Controlled Rectifier.Appendices: A: PN Junction.B: MOS Junction.C: MS Junction.

Erscheint lt. Verlag 31.7.1993
Zusatzinfo 200 illustrations
Sprache englisch
Maße 158 x 236 mm
Gewicht 817 g
Themenwelt Technik Elektrotechnik / Energietechnik
ISBN-10 0-07-002469-3 / 0070024693
ISBN-13 978-0-07-002469-4 / 9780070024694
Zustand Neuware
Informationen gemäß Produktsicherheitsverordnung (GPSR)
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