III-V-Semiconductor Subcell Absorbers in Silicon-Based Triple-Junction Solar Cells
Seiten
2024
Fraunhofer Verlag
978-3-8396-1986-5 (ISBN)
Fraunhofer Verlag
978-3-8396-1986-5 (ISBN)
Tandem solar cells are required for higher photovoltaic module efficiencies and thus reduced costs and land demand. This thesis was concerned with the development of a two-terminal III-V//Si triple-junction solar cell. Two compound semiconductors, AlGaAs and GaInAsP, were investigated. The samples were grown lattice matched on GaAs substrates using metalorganic vapor phase epitaxy. GaInAsP exhibited a high performance with a minimum loss to the radiative limit of 18 mV in a rear-heterojunction solar cell. An optical parameter morphing method was optimised to generate continuous refractiv index data for arbitrary absorber compositions. The robustness of the method was experimentally confirmed by a comparison to literature values as well as spectral ellipsometry, external quantum efficiency, and reflection measurements. With the complex refractive index data the target absorber thicknesses in multi-junction solar cells were adjusted by transfer matrix modelling to achieve current match between the subcells. The triple-junction solar cell achieved a power conversion efficiency of 35.9 % under the AM1.5g solar spectrum, the highest efficiency for monolithic silicon based cells to date.
Erscheinungsdatum | 06.03.2024 |
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Reihe/Serie | Solare Energie- und Systemforschung / Solar Energy and Systems Research |
Zusatzinfo | num., mostly col. illus. and tab |
Verlagsort | Stuttgart |
Sprache | englisch |
Maße | 148 x 210 mm |
Themenwelt | Technik ► Elektrotechnik / Energietechnik |
Schlagworte | Alternative Energiequellen • Energieeffizienz • Erneuerbare Energien • Festkörperphysik • Materialwissenschaft • Nachhaltigkeit • Nachhaltigkeit Energieeffizienz • Solarzellwissenschaftler*innen, Festkörperphysiker*innen |
ISBN-10 | 3-8396-1986-6 / 3839619866 |
ISBN-13 | 978-3-8396-1986-5 / 9783839619865 |
Zustand | Neuware |
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