SiC Power Module Design
Institution of Engineering and Technology (Verlag)
978-1-78561-907-6 (ISBN)
High-frequency switching power semiconductor devices are at the heart of power electronic converters. To date, these devices have been dominated by the well-established silicon (Si) technology. However, their intrinsic physical limits are becoming a barrier to achieving higher performance power conversion. Wide Bandgap (WBG) semiconductor devices offer the potential for higher efficiency, smaller size, lighter weight, and/or longer lifetime. Applications in power grid electronics as well as in electromobility are on the rise, but a number of technological bottle-necks need to be overcome if applications are to become more widespread - particularly packaging.
This book describes the development of advanced multi-chip packaging solutions for novel WBG semiconductors, specifically silicon carbide (SiC) power MOSFETs.
Coverage includes an introduction; multi-chip power modules; module design and transfer to SiC technology; electrothermal, thermo-mechanical, statistical and electromagnetic aspects of optimum module design; high temperature capable SiC power modules; validation technologies; degradation monitoring; and emerging packaging technologies. The book is a valuable reference for researchers and experts in academia and industry.
Alberto Castellazzi is a professor at the Kyoto University of Advanced Science, Japan. His research focuses on advanced solid-state power processing, including the characterization and use of wide-band-gap semiconductor devices. He has 20 years' experience in power electronics R&D from both industry and academia, including University of Nottingham, UK, SIEMENS (Germany), ETH Zurich (Switzerland), and ALSTOM (France). He is a member of The Power Electronic Conversion Technology Annex (PECTA) of the IEA. Andrea Irace is a professor of electronics at the University of Naples Federico II, Italy. His research focuses on modelling and simulation of WBG devices for power electronics. Prior assignments included the Delft Institute of Microelectronics and Submicron Technology. He has authored more than 120 papers in international publications.
Chapter 1: SiC power MOSFETs and their application
Chapter 2: Anatomy of a multi-chip power module
Chapter 3: Established module design and transfer to SiC technology
Chapter 4: Temperature-dependent modeling of SiC power MOSFETs for within- and out-of-SOA simulations
Chapter 5: Optimum module design I: electrothermal
Chapter 6: Optimum module design II: impact of parameter design spread
Chapter 7: Optimum module design III: electromagnetic
Chapter 8: Power module lifetime evaluation methodologies
Chapter 9: High-temperature capable SiC power modules by Ag sintering on various metal interfaces
Chapter 10: Advanced die-attach validation technologies
Chapter 11: Power module degradation monitoring
Chapter 12: Advanced thermal management solutions
Chapter 13: Emerging packaging concepts and technologies
| Erscheinungsdatum | 02.02.2022 |
|---|---|
| Reihe/Serie | Energy Engineering |
| Verlagsort | Stevenage |
| Sprache | englisch |
| Maße | 156 x 234 mm |
| Themenwelt | Technik ► Elektrotechnik / Energietechnik |
| ISBN-10 | 1-78561-907-1 / 1785619071 |
| ISBN-13 | 978-1-78561-907-6 / 9781785619076 |
| Zustand | Neuware |
| Informationen gemäß Produktsicherheitsverordnung (GPSR) | |
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