Spacer Engineered FinFET Architectures
High-Performance Digital Circuit Applications
Seiten
2020
CRC Press (Verlag)
978-0-367-57355-3 (ISBN)
CRC Press (Verlag)
978-0-367-57355-3 (ISBN)
This book focusses on the spacer engineering aspects of novel MOS-based device–circuit co-design in sub-20nm technology node, its process complexity, variability, and reliability issues. It comprehensively explores the FinFET/tri-gate architectures with their circuit/SRAM suitability and tolerance to random statistical variations.
Sudeb Dasgupta, Brajesh Kumar Kaushik, Pankaj Kumar Pal
Preface
About the Authors
Chapter 1 ◾ Introduction to Nanoelectronics
Chapter 2 ◾ Tri-Gate FinFET Technology and Its Advancement
Chapter 3 ◾ Dual-k Spacer Device Architecture and Its Electrostatics
Chapter 4 ◾ Capacitive Analysis and Dual-k FinFET-Based Digital Circuit Design
Chapter 5 ◾ Design Metric Improvement of a Dual-k–Based SRAM Cell
Chapter 6 ◾ Statistical Variability and Sensitivity Analysis
INDEX
Erscheinungsdatum | 01.07.2020 |
---|---|
Verlagsort | London |
Sprache | englisch |
Maße | 156 x 234 mm |
Gewicht | 260 g |
Themenwelt | Technik ► Elektrotechnik / Energietechnik |
ISBN-10 | 0-367-57355-5 / 0367573555 |
ISBN-13 | 978-0-367-57355-3 / 9780367573553 |
Zustand | Neuware |
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