Nanoscale Redox Reaction at Metal/Oxide Interface (eBook)
XI, 89 Seiten
Springer Tokyo (Verlag)
978-4-431-54850-8 (ISBN)
Oxide materials are good candidates for replacing Si devices, which are increasingly reaching their performance limits, since the former offer a range of unique properties, due to their composition, design and/or doping techniques.
The author introduces a means of selecting oxide materials according to their functions and explains metal/oxide interface physics. As he demonstrates, material development is the key to matching oxide materials to specific practical applications.
In this book, the investigation and intentional control of metal/oxide interface structure and electrical properties using data obtained with non-destructive methods such as x-ray photoelectron spectroscopy (XPS) and x-ray reflectometry (XRR) are discussed. Further, it shows how oxide materials can be used to support the development of future functional devices with high-k, ferroelectric, magnetic and optical properties. In closing, it explains optical sensors as an application of metal Schottky contact and metal/oxide resistive random access memory structure.
Takahiro Nagata is a Group Leader at the Research Center for Functional Materials, National Institute for Materials Science (NIMS). He received his Ph.D. from Osaka Prefecture University in 2003. He joined NIMS as a Researcher at the Advanced Electric Materials Center in 2006, was appointed a Senior Researcher in the Semiconductor Device Materials Group at MANA in 2011, and has served in his current position since 2018. He was also a Visiting Scientist at the Department of Materials, University of California Santa Barbara in 2008-2009. Currently he is also a Visiting Professor at the Graduate School of Science and Technology, Meiji University.
His work focuses on developing combinatorial synthesis systems and high-throughput characterization tools for screening candidate materials in the context of materials informatics. Most recently, he has begun expanding his focus to nanoelectronics materials, including wide band-gap semiconductors.
Oxide materials are good candidates for replacing Si devices, which are increasingly reaching their performance limits, since the former offer a range of unique properties, due to their composition, design and/or doping techniques. The author introduces a means of selecting oxide materials according to their functions and explains metal/oxide interface physics. As he demonstrates, material development is the key to matching oxide materials to specific practical applications.In this book, the investigation and intentional control of metal/oxide interface structure and electrical properties using data obtained with non-destructive methods such as x-ray photoelectron spectroscopy (XPS) and x-ray reflectometry (XRR) are discussed. Further, it shows how oxide materials can be used to support the development of future functional devices with high-k, ferroelectric, magnetic and optical properties. In closing, it explains optical sensors as an application of metal Schottky contact and metal/oxide resistive random access memory structure.
| Erscheint lt. Verlag | 21.5.2020 |
|---|---|
| Reihe/Serie | NIMS Monographs | NIMS Monographs |
| Zusatzinfo | XI, 89 p. 63 illus., 51 illus. in color. |
| Sprache | englisch |
| Themenwelt | Technik ► Elektrotechnik / Energietechnik |
| Technik ► Maschinenbau | |
| Schlagworte | Combinatorial Synthesis • Metal/oxide Interface • plasma surface treatment • Resistive Random Access Memory • Schottky Contact • Surface Electron Accumulation Layer • X-Ray Photoelectron Spectroscopy • X-ray Reflectometry |
| ISBN-10 | 4-431-54850-5 / 4431548505 |
| ISBN-13 | 978-4-431-54850-8 / 9784431548508 |
| Informationen gemäß Produktsicherheitsverordnung (GPSR) | |
| Haben Sie eine Frage zum Produkt? |
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