Tantalum and Niobium-Based Capacitors
Springer International Publishing (Verlag)
978-3-319-88500-1 (ISBN)
This book provides a comprehensive analysis of the science, technology, and applications of Tantalum and Niobium-based capacitors. The author discusses fundamentals, focusing on thermodynamic stability, major degradation processes and conduction mechanisms in the basic structure of Me-Me2O5-cathode (Me: Ta, Nb). Technology-related coverage includes chapters technology chapters on the major manufacturing steps from capacitor grade powder to the testing of finished capacitors. Applications discussed include high reliability, high charge and energy efficiency, high working voltages, high temperatures, etc. The links between the scientific foundation, breakthrough technologies and outstanding performance and reliability of the capacitors are demonstrated. The theoretical models discussed include the thermodynamics of the amorphous dielectrics, conduction mechanisms in metal-insulator-semiconductor (MIS) structures, band diagrams of the organic semiconductors, etc.
Yuri P. Freeman is director of advanced research in the Tantalum (Ta) business unit and a member of the Advance Technology Group (ATG) at KEMET Electronics. The ATG is responsible for KEMET's technical strategy, which includes cooperation with Universities on fundamental issues in passive electronic components. Yuri P. Freeman received his Ph.D. in physics of the solid state from Kharkov Technical University (KhTU) in Ukraine. Prior to KEMET, he worked as principal scientist at Elitan, the largest producer in the Soviet Union of Ta and Niobium (Nb) capacitors, and at Vishay Sprague in the USA. Simultaneously with working in industry, he taught "Physics of Electronic Components" in the KhTU and now in the Clemson University in the USA. Yuri P. Freeman has published more than 30 papers and received 26 patents in the field of physics and technology of Ta and Nb-based capacitors.
Introduction.- Chap1: Major Degradation Mechanisms.- Chap2: Basic Technology.- Chap3: Applications.- Conclusion.
| Erscheint lt. Verlag | 29.8.2018 |
|---|---|
| Zusatzinfo | XIX, 120 p. 109 illus., 57 illus. in color. |
| Verlagsort | Cham |
| Sprache | englisch |
| Maße | 155 x 235 mm |
| Gewicht | 226 g |
| Themenwelt | Technik ► Elektrotechnik / Energietechnik |
| Schlagworte | amorphous Ta2O5 thin films • Capacitor Technology • Materials Research for Manufacturing • metal-insulator-semiconductor • MOSFET transistors |
| ISBN-10 | 3-319-88500-6 / 3319885006 |
| ISBN-13 | 978-3-319-88500-1 / 9783319885001 |
| Zustand | Neuware |
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