Oxide Reliability: A Summary Of Silicon Oxide Wearout, Breakdown, And Reliability

David J Dumin (Herausgeber)

Buch | Hardcover

280 Seiten

2002
World Scientific Publishing Co Pte Ltd (Verlag)
978-981-02-4842-0 (ISBN)

Infos

A summary of our knowledge of oxide reliability, featuring articles written by experts in the field. It should be useful to reliability engineers and manufacturing engineers, helping them to produce and characterize reliable oxides. It can also be used as an introduction for new engineers.

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This book presents in summary the state of our knowledge of oxide reliability. The articles have been written by experts who are among the most knowledgeable in the field. The book will be an invaluable aid to reliability engineers and manufacturing engineers, helping them to produce and characterize reliable oxides. It can be used as an introduction for new engineers interested in oxide reliability, besides being a reference for engineers already engaged in the field.

Inhalt

Oxide wearout, breakdown, and reliability, D.J. Dumin; reliability of flash nonvolatile memories, N. Mielke and J. Chen; physics and chemistry of intrinsic time-dependent dielectric breakdown in SiO2 dielectrics, J.W. McPherson; breakdown modes and breakdown statistics of ultrathin SiO2 gate oxides, J. Sune et al; MOSFET gate oxide reliability - anode hole injection model and its applications, Y.-C. Yeo et al.

Produkt-Details

• Erscheint lt. Verlag: 28.1.2002
• Reihe/Serie: Selected Topics in Electronics and Systems ; 23
• Verlagsort: Singapore
• Sprache: englisch
• Themenwelt: Technik ► Elektrotechnik / Energietechnik
• Themenwelt: Technik ► Maschinenbau
• ISBN-10: 981-02-4842-3 / 9810248423
• ISBN-13: 978-981-02-4842-0 / 9789810248420
• Zustand: Neuware