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Characterization of Wide Bandgap Power Semiconductor Devices

Buch | Hardcover
347 Seiten
2018
Institution of Engineering and Technology (Verlag)
978-1-78561-491-0 (ISBN)
CHF 229,95 inkl. MwSt
This book is an authoritative overview of Wide Bandgap (WBG) device characterization providing essential tools to assist the reader in performing both static and dynamic characterization of WBG devices, particularly those based on using silicon carbide (SiC) and gallium nitride (GaN) power semiconductors.
At the heart of modern power electronics converters are power semiconductor switching devices. The emergence of wide bandgap (WBG) semiconductor devices, including silicon carbide and gallium nitride, promises power electronics converters with higher efficiency, smaller size, lighter weight, and lower cost than converters using the established silicon-based devices. However, WBG devices pose new challenges for converter design and require more careful characterization, in particular due to their fast switching speed and more stringent need for protection.


Characterization of Wide Bandgap Power Semiconductor Devices presents comprehensive methods with examples for the characterization of this important class of power devices. After an introduction, the book covers pulsed static characterization; junction capacitance characterization; fundamentals of dynamic characterization; gate drive for dynamic characterization; layout design and parasitic management; protection design for double pulse test; measurement and data processing for dynamic characterization; cross-talk consideration; impact of three-phase system; and topology considerations.

Fei (Fred) Wang is Professor of Electrical Engineering and Condra Chair of Excellence in Power Electronics, and Technical Director of NSF/DOE Engineering Research Center CURENT at The University of Tennessee, Knoxville, USA. He also holds a joint appointment with Oak Ridge National Lab. Prof. Wang has published over 400 journal and conference papers, authored 3 book chapters, and holds 15 US patents. He is a fellow of IEEE and NAI. Zheyu Zhang is a Lead Power Electronics Engineer with General Electric Global Research. He was a Research Assistant Professor at the University of Tennessee, Knoxville from 2015 to 2018. He has published over 60 papers in the most prestigious journals and conference proceedings, four patent applications with one licensed, and two IEEE tutorial seminars. He was the recipient of two IEEE prize paper awards. Edward A. Jones is a Senior Applications Engineer with Efficient Power Conversion Corporation. He completed his Ph.D. at The University of Tennessee, where he was a Chancellor's Fellow, a CURENT Fellow, and a Bredesen Energy Sciences and Engineering Fellow. He has published over 20 peer-reviewed IEEE papers, an IEEE tutorial seminar, and a patent.

Chapter 1: Introduction
Chapter 2: Pulsed static characterization
Chapter 3: Junction capacitance characterization
Chapter 4: Fundamentals of dynamic characterization
Chapter 5: Gate drive for dynamic characterization
Chapter 6: Layout design and parasitic management
Chapter 7: Protection design for double pulse test
Chapter 8: Measurement and data processing for dynamic characterization
Chapter 9: Cross-talk consideration
Chapter 10: Impact of three-phase system
Chapter 11: Topology consideration
Appendix A: Recommended equipment and components list for DPT setup
Appendix B: Data processing code for dynamic characterization

Erscheinungsdatum
Reihe/Serie Energy Engineering
Verlagsort Stevenage
Sprache englisch
Maße 156 x 234 mm
Themenwelt Technik Elektrotechnik / Energietechnik
ISBN-10 1-78561-491-6 / 1785614916
ISBN-13 978-1-78561-491-0 / 9781785614910
Zustand Neuware
Informationen gemäß Produktsicherheitsverordnung (GPSR)
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