Vertical GaN and SiC Power Devices
Artech House Publishers (Verlag)
978-1-63081-427-4 (ISBN)
This is an introduction to vertical gallium nitride (GaN) and silicon carbide (SiC) power devices for students and professionals working in the field of crystal growth, processing, and design. The book uses commercial examples from recent years and includes topics that have not yet been covered by other textbooks on the subject, such as metal/semiconductor junctions, junction terminations, and reliability of vertical GaN and SiC power devices.
As GaN can reabsorb recombination radiation (i.e. photon recycling) and SiC cannot, the book emphasises the effects photon recycling. Photon recycling in GaN is attributable to very large peripheral current flowing through non-self-aligned mesa-type p-n junctions. Up till now, this phenomenon has been treated one-dimensionally. The book also offers in-depth coverage of bulk crystal growth of GaN, including hydride vapor-phase epitaxial (HVPE) growth, high-pressure nitrogen solution growth, sodium-flux growth, ammonothermal growth, and sublimation growth of SiC.
Kazuhiro Mochizuki is affiliated with the National Institute of Advanced Industrial Science and Technology, Japan. Previously he was involved in the research of GaN and SiC power devices at the Central Research Laboratory, Hitachi Ltd., Tokyo, Japan. He is a senior member of IEEE and a member of the Japan Society of Applied Physics. He is also a lecturer at the University of Electro-Communications, Tokyo, Japan and Hosei University, Tokyo, Japan. He received his B.S., M.S., and Ph.D. in electronic engineering from the University of Tokyo, Japan.
Vertical vs. Lateral Power Semiconductor Devices; Physical Properties of GaN and SiC; p-n Junctions; Effects of Photon Recycling; Bulk Crystal Growth; Epitaxial Growth; Fabrication Processes; Metal-Semiconductor Contacts and Unipolar Power Diodes; Metal-Insulator-Semiconductor (MIS) Capacitors and Unipolar; Bipolar Power Diodes and Power Switching Devices; Edge Terminations; Reliability of Vertical GaN and SiC Power Devices.
| Erscheinungsdatum | 14.07.2018 |
|---|---|
| Verlagsort | Norwood |
| Sprache | englisch |
| Themenwelt | Naturwissenschaften |
| Technik ► Elektrotechnik / Energietechnik | |
| ISBN-10 | 1-63081-427-X / 163081427X |
| ISBN-13 | 978-1-63081-427-4 / 9781630814274 |
| Zustand | Neuware |
| Informationen gemäß Produktsicherheitsverordnung (GPSR) | |
| Haben Sie eine Frage zum Produkt? |
aus dem Bereich
