Bias Temperature Instability for Devices and Circuits

Buch | Softcover

810 Seiten

2016 | Softcover reprint of the original 1st ed. 2014
Springer-Verlag New York Inc.
978-1-4939-5529-9 (ISBN)

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This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.

Introduction.- Characterization, Experimental Challenges.- Advanced Characterization.- Characterization of Nanoscale Devices.- Statistical Properties/Variability.- Theoretical Understanding.- Possible Defects: Experimental.- Possible Defects: First Principles.- Modeling.- Technological Impact.- Silicon dioxides/SiON.- High-k oxides.- Alternative technologies.- Circuits.

Erscheinungsdatum	02.10.2016
Zusatzinfo	318 Illustrations, color; 283 Illustrations, black and white; XI, 810 p. 601 illus., 318 illus. in color.
Verlagsort	New York
Sprache	englisch
Maße	155 x 235 mm
Themenwelt	Technik ► Bauwesen
	Technik ► Elektrotechnik / Energietechnik
	Technik ► Maschinenbau
Schlagworte	Metastable Defects in Semiconductor Devices • Nanoscale MOSFETs • Negative Bias Temperature Instability • Semiconductor Device Lifetime • Semiconductor Device Reliability • Stochastic Behavior in Semiconductor Devices
ISBN-10	1-4939-5529-2 / 1493955292
ISBN-13	978-1-4939-5529-9 / 9781493955299
Zustand	Neuware