Nitride Wide Bandgap Semiconductor Material and Electronic Devices

Yue Hao, Jin Feng Zhang, Jin Cheng Zhang (Autoren)

Buch | Hardcover

392 Seiten

2016
Crc Press Inc (Verlag)
978-1-4987-4512-3 (ISBN)

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This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

Yue Hao, Jin Feng Zhang, and Jin Cheng Zhang are affiliated with Xidian University, China.

Nitride Wide Bandgap Semiconductor Material and Electronic Devices

Erscheint lt. Verlag	1.11.2016
Zusatzinfo	30 Tables, black and white; 469 Illustrations, black and white
Verlagsort	Bosa Roca
Sprache	englisch
Maße	178 x 254 mm
Gewicht	884 g
Themenwelt	Naturwissenschaften ► Physik / Astronomie ► Allgemeines / Lexika
	Naturwissenschaften ► Physik / Astronomie ► Optik
	Technik ► Elektrotechnik / Energietechnik
ISBN-10	1-4987-4512-1 / 1498745121
ISBN-13	978-1-4987-4512-3 / 9781498745123
Zustand	Neuware