Emerging Nanoelectronic Devices (eBook)

An Chen, James Hutchby, Victor Zhirnov, George Bourianoff (Herausgeber)

eBook Download: EPUB

2014 | 1. Auflage
576 Seiten
Wiley (Verlag)
978-1-118-95827-8 (ISBN)

Infos

Emerging Nanoelectronic Devices focuses on the future direction of semiconductor and emerging nanoscale device technology. As the dimensional scaling of CMOS approaches its limits, alternate information processing devices and microarchitectures are being explored to sustain increasing functionality at decreasing cost into the indefinite future.  This is driving new paradigms of information processing enabled by innovative new devices, circuits, and architectures, necessary to support an increasingly interconnected world through a rapidly evolving internet. This original title provides a fresh perspective on emerging research devices in 26 up to date chapters written by the leading researchers in their respective areas. It supplements and extends the work performed by the Emerging Research Devices working group of the International Technology Roadmap for Semiconductors (ITRS).
Key features:

• Serves as an authoritative tutorial on innovative devices and architectures that populate the dynamic world of “Beyond CMOS” technologies.
• Provides a realistic assessment of the strengths, weaknesses and key unknowns associated with each technology.
• Suggests guidelines for the directions of future development of each technology.
• Emphasizes physical concepts over mathematical development.
• Provides an essential resource for students, researchers and practicing engineers.

An Chen is with GLOBALFOUNDRIES, working on emerging logic and memory technologies.  He is the Memory Technology Lead responsible for exploratory memory research with industrial consortia including IMEC and Sematech.  His memory research focuses primarily on RRAM and STTRAM.  Prior to GLOBALFOUNDRIES, he worked at Spansion LLC on emerging memory research and at Advanced Micro Devices (AMD) on nanoelectronics.  He is currently chairing the Emerging Research Device (ERD) working group in the International Technology Roadmap of Semiconductors (ITRS).  He is also a Senior Member of the IEEE. 

James Hutchby, Senior Scientist, Emeritus, was formerly Director of Device Sciences of Semiconductor Research Corporation (SRC). Prior to joining SRC he was founding Director of the Research Triangle Institute’s Center for Semiconductor Research, which consisted of five research groups performing research on: low-temperature growth of diamond; high efficiency multi-bandgap solar cells; complementary HBT devices and integrated circuits and high efficiency thermoelectrics and theremovoltaics. Dr Hutchby has authored or co-authored over 160 contributed and invited papers.  He is also a Life Fellow of the IEEE and a recipient of the IEEE Third Millennium Medal. 

Victor Zhirnov is Director of Special Projects at the SRC. His research interests include nanoelectronics devices and systems, properties of materials at the nanoscale and bio-inspired electronic systems. He also holds an adjunct faculty position at North Carolina State University and has served as an advisor to a number of government, industrial, and academic institutions. Victor Zhirnov has authored and co-authored over 100 technical papers and contributions to books. 

George Bourianoff is a Senior Principle Engineer in the Components Research group at Intel. He is responsible for developing and managing research programs in emerging research technologies and architectures.  He also serves on the scientific advisory boards of the Nanoelectronic Research Initiative (NRI) and the Semiconductor Technology Advanced Research Network. (STARnet).  Prior to joining Intel in 1994 Dr Bourianoff was a group leader in the Superconducting Supercollidier Project in Texas responsible for accelerator simulation.  Prior to that, he was a Senior Scientist with SAIC responsible for Magneto Hydrodynamic code development.

Textauszug

Acronyms

1D1R	1-Diode-1-resistor

1S1R	1-Selector-1-resistor

1T	One transistor

1T1C	1-Transistor-1-capacitor

1T1R	1-Transistor-1-resistor

2DEG	Two-dimensional electron gas

3D	Three dimensional

AD	Analog digital

AF	Anti-ferromagnetic

AIST	Silver (Ag) Indium (In) Antimony (Sb) Tellurium (Te)

ALD	Atomic layer deposition

AM	Associative memory

ASIC	Application specific integrated circuit

ASL	All-spin logic

BARITT diode

Barrier-injection transit-time diode

BBE	Brain, body, environment based interactions

BBL	Buried bit line

BDA	1,4-Benzenediamine

BDC60

Bis(fullero[c]pyrolidin-1y1)benzene

BDT	1,4-Benzenedithiol

BE	Bottom electrode

BEC	Bottom electrode contact

BEOL	Back end of line

BFO	Bismuth ferrite (BiFeO3)

BiSFET

Bilayer pseudo-spin field-effect transistor

BIST	Built-in self-test

BJT	Bipolar junction transistor

BL

Bit line

BLG	Bilayer graphene

BN	Beyond Neumann

CA	Cellular automata

CAM	Contend addressable memory

CBL	Cantilever bit line

CBRAM

Conductive-bridge random access memory

CDMA	Code division multiple access

CMIS	Current-induced magnetization switching

CMOS	Complementary metal oxide semiconductor

CNT	Carbon nanotube

CNTFET

Carbon nanotube field-effect transistor

CO	Carbon monoxide

CoFeB

Cobalt iron boron

CoPt	Cobalt platinum

CP-AFM

Conducting probe–atomic force microscopy

CPP	Current perpendicular to plane

CPU	Central processing unit

CRS	Complementary resistive switch

CTAFM

Conductive-tip atomic force microscopy

D	Density of states

DC	Direct contact

DC8 to DC12

Eight to 12 carbon atoms in alkanedithiols

dCNT	Carbon nanotube diameter

DFT	Density functional theory

DIBL	Drain induced barrier lowering

DMRG method

Density matrix renormalization group method

DNA	Deoxyribonucleic acid

DoM	Degree of match

DOS	Density of states

DRAM	Dynamic random access memory

DVD	Digital versatile disc

e	Elementary charge of an electron

EBIC	Electron beam induced current

EBJs	Electromigrated break junctions

EEPROM

Electrically erasable programmable read only memory

Eg	Energy bandgap

EM	Electromechanical

EMB	Electrochemical metallization bridge

EOT	Equivalent oxide thickness

ERD	Emerging research devices

FD	Fully depleted

FeFET

Ferroelectric field effect transistor

Fe-NAND

Ferroelectric NAND

FeRAM

Ferroelectric random access memory

FERET

Facial recognition technology

FET	Field-effect transistor

FIB	Focused ion beam

FinFET

Multi-gate MOSFET with fin-shaped active structure

FL	Free layer

FM	Ferromagnetic

FN	Fowler–Nordheim

FOPE	Fluorinated oligomer

FPGA	Field programmable gate array

FRAM	Ferroelectric random access memory

FTJ	Ferroelectric tunnel junction

FWHM	Full width at half maximum

GAA	Gate all around

GaAs	Gallium arsenide

GMR	Giant magnetoresistive

GNM	Graphene nanomesh

GNR	Graphene nanoribbon

GQ	Quantum conductance

GSHE	Giant spin Hall effect

GST	Germanium (Ge), Antimony(Sb), Tellurium(Te)

h	Planck's constant

HAO

Hf-Al-O

HDD	Hard disk drive

HEMT	High electron mobility transistor

HF	Hydrofluoric acid

HKMG	High-k metal gate

HMAX	Hierarchical memory and X

HOMO	Highest occupied molecular orbital

HP	High performance

HRS	High resistance state

HTM	Hierarchical temporal memory

IC	Integrated circuit

ICT	Information and communication technologies

IEDM	International Electron Devices Meeting

IETS	Inelastic electron tunneling spectroscopy

I-MOS

Impact-ionization MOS

InAlAs

Indium aluminum arsenide

InAs	Indium arsenide

InGaAs

Indium gallium arsenide

iNML	In-plane nanomagnet logic

InP	Indium phosphide

InSb	Indium antimonide

Ioff	Off current

Ion	On current

IOP	Input–output processor

IPCM	Interfacial phase change memory

ITRS	International Technology Roadmap for Semiconductors

KJMA	Kolmogorov, Johnson and Mehl, and Avrami

Lch	Channel length

LEC	Lyric error correction

Lg	Gate length

LLG	Landau–Lifshitz–Gilbert

LRS	Low resistance state

Lspr	Spacer length

LtN	Less than Neumann

LUMO	Lowest unoccupied molecular orbital

m	Carrier effective mass

MC	Magneto current ratio

MCBJs

Mechanically controllable break junctions

MEMS	Micro-electro-mechanical systems

MFIS

Metal...

Produkt-Details

• Erscheint lt. Verlag: 26.11.2014
• Sprache: englisch
• Themenwelt: Technik ► Elektrotechnik / Energietechnik
• Schlagworte: Beyond CMOS • Carbon electronics • Circuit Theory & Design / VLSI / ULSI • Electrical & Electronics Engineering • Electronic materials • Elektronische Materialien • Elektrotechnik u. Elektronik • emerging architectures • Emerging logic • Emerging Memory • MEMS • nanoelectronics • Schaltkreise - Theorie u. Entwurf / VLSI / ULSI • Spintronics
• ISBN-10: 1-118-95827-6 / 1118958276
• ISBN-13: 978-1-118-95827-8 / 9781118958278