Strain Effect in Semiconductors

Theory and Device Applications

Yongke Sun, Scott E. Thompson, Toshikazu Nishida (Autoren)

Buch | Softcover

350 Seiten

2014 | 2010 ed.
Springer-Verlag New York Inc.
978-1-4899-8315-2 (ISBN)

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Strain Effect in Semiconductors: Theory and Device Applications presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers. Discusses relevant applications of strain while also focusing on the fundamental physics pertaining to bulk, planar, and scaled nano-devices. Hence, this book is relevant for current strained Si logic technology as well as for understanding the physics and scaling for future strained nano-scale devices.

Overview: The Age of Strained Devices.- Band Structures of Strained Semiconductors.- Stress, Strain, Piezoresistivity, and Piezoelectricity.- Strain and Semiconductor Crystal Symmetry.- Band Structures of Strained Semiconductors.- Low-Dimensional Semiconductor Structures.- Transport Theory of Strained Semiconductors.- Semiconductor Transport.- Strain in Semiconductor Devices.- Strain in Electron Devices.- Piezoresistive Strain Sensors.- Strain Effects on Optoelectronic Devices.

Erscheint lt. Verlag	20.11.2014
Zusatzinfo	XII, 350 p.
Verlagsort	New York
Sprache	englisch
Maße	155 x 235 mm
Themenwelt	Naturwissenschaften ► Chemie ► Analytische Chemie
	Naturwissenschaften ► Physik / Astronomie ► Atom- / Kern- / Molekularphysik
	Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik
	Naturwissenschaften ► Physik / Astronomie ► Thermodynamik
	Technik ► Elektrotechnik / Energietechnik
	Technik ► Maschinenbau
ISBN-10	1-4899-8315-5 / 1489983155
ISBN-13	978-1-4899-8315-2 / 9781489983152
Zustand	Neuware