Fundamentals of Silicon Carbide Technology (eBook)

Growth, Characterization, Devices and Applications

Tsunenobu Kimoto, James A. Cooper (Autoren)

eBook Download: PDF

2014 | 1. Auflage
560 Seiten
John Wiley & Sons (Verlag)
978-1-118-31354-1 (ISBN)

Infos

A comprehensive introduction and up-to-date reference to
SiC power semiconductor devices covering topics from material
properties to applications

Based on a number of breakthroughs in SiC material science
and fabrication technology in the 1980s and 1990s, the first SiC
Schottky barrier diodes (SBDs) were released as commercial products
in 2001. The SiC SBD market has grown significantly since
that time, and SBDs are now used in a variety of power systems,
particularly switch-mode power supplies and motor controls.
SiC power MOSFETs entered commercial production in 2011,
providing rugged, high-efficiency switches for high-frequency power
systems. In this wide-ranging book, the authors draw on their
considerable experience to present both an introduction to SiC
materials, devices, and applications and an in-depth reference for
scientists and engineers working in this fast-moving
field. Fundamentals of Silicon Carbide Technology
covers basic properties of SiC materials, processing technology,
theory and analysis of practical devices, and an overview of the
most important systems applications. Specifically included
are:

* A complete discussion of SiC material properties, bulk crystal
growth, epitaxial growth, device fabrication technology, and
characterization techniques.

* Device physics and operating equations for Schottky diodes, pin
diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and
thyristors.

* A survey of power electronics applications, including
switch-mode power supplies, motor drives, power converters for
electric vehicles, and converters for renewable energy
sources.

* Coverage of special applications, including microwave devices,
high-temperature electronics, and rugged sensors.

* Fully illustrated throughout, the text is written by recognized
experts with over 45 years of combined experience in SiC research
and development.

This book is intended for graduate students and researchers in
crystal growth, material science, and semiconductor device
technology. The book is also useful for design engineers,
application engineers, and product managers in areas such as power
supplies, converter and inverter design, electric vehicle
technology, high-temperature electronics, sensors, and smart grid
technology.

Autor

Tsunenobu Kimoto, Department of Electronic Science and Engineering, Kyoto University, Japan. Professor Kimoto has been involved in SiC research for more than 20 years and his research activity in this field covers growth, optical and electrical characterization, device processing, device design and fabrication. He has published more than 300 papers in international journals and has presented more than 50 invited talks at international conferences. He was a guest editor of the 2008 SiC special issues of IEEE Transactions on Electron Devices. James A Cooper, School of Electrical and Computer Engineering, Purdue University, Indiana, USA Professor Cooper was a member of technical staff at Bell Laboratories for ten years where he was principal designer of AT&T's first microprocessor and investigated nonlinear transport in silicon inversion layers. His research at Purdue has centered on semiconductor device physics and characterization, focusing primarily on III-V materials and silicon carbide. He has co-authored over 250 technical papers and conference presentations.

Rezensionen

"Students or working professionals interested in SiC technology will find this book worth reading." (IEEE Electrical Insulation Magazine, 1 November 2015)

"If you have any interest in the now emerging SiC semiconductor devices, this book covers it all and in sufficient depth to answer questions that might arise from process engineers, device modelers, or power - circuits and systems designers. It really is the book to have on SiC, and because of its breadth as well as depth, would be a good supplement to solid - state physics or electronics books, device design or SPICE modeling, or to provide a solid foundation for circuit design with SiC devices." (How2Power.com, 1 March 2015)

Produkt-Details

• Erscheint lt. Verlag: 22.9.2014
• Reihe/Serie: Wiley - IEEE
• Reihe/Serie: Wiley - IEEE
• Sprache: englisch
• Themenwelt: Technik ► Elektrotechnik / Energietechnik
• Themenwelt: Technik ► Maschinenbau
• Schlagworte: Electrical & Electronics Engineering • Elektrotechnik u. Elektronik • Halbleiter • Leistungselektronik • materials processing • Materials Science • Materialverarbeitung • Materialwissenschaften • Power Electronics • semiconductors • Siliziumkarbid
• ISBN-10: 1-118-31354-2 / 1118313542
• ISBN-13: 978-1-118-31354-1 / 9781118313541