Gettering and Defect Engineering in Semiconductor Technology XV

Buch | Softcover

520 Seiten

2014
Trans Tech Publications Ltd (Verlag)
978-3-03785-824-0 (ISBN)

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GADEST 2013

Selected, peer reviewed papers from the 15th Gettering and Defect Engineering in Semiconductor Technology (GADEST 2013), September 22-27, 2013, Oxford, UK

The book includes both fundamental and technological aspects of defects in semiconductor materials and devices, including photovoltaics.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
The 74 papers are grouped as follows: I. Defect engineering in silicon solar cells; II. Structural and production issues in cast silicon materials for solar cells; III. Characterisation of silicon for solar cells; IV. Intrinsic point defects in silicon; V. Light impurities in silicon-based materials; VI. Metals in silicon: fundamental properties and gettering; VII. Extended and implantation-related defects in silicon; VIII. Surfaces, passivation and processing; IX. Germanium-based devices and materials; X. Semiconductors other than silicon and germanium; XI. Nanostructures and new materials systems.

Preface, Committees, Invited Speakers and Sponsor
I. Defect Engineering in Silicon Solar Cells
Light-Induced Boron-Oxygen Recombination Centres in Silicon: Understanding their Formation and Elimination
Iron Management in Multicrystalline Silicon through Predictive Simulation: Point Defects, Precipitates, and Structural Defect Interactions
External and Internal Gettering of Interstitial Iron in Silicon for Solar Cells
Precipitation of Interstitial Iron in Multicrystalline Silicon
Direct Observation of Carrier Trapping Processes on Fe Impurities in mc-Si Solar Cells
On the Trade-Off between Industrially Feasible Silicon Surface Preconditioning Prior to Interface Passivation and Iron Contaminant Removal Effectiveness
II. Structural and Production Issues in Cast Silicon Materials for Solar Cells
Defect Generation and Propagation in Mc-Si Ingots: Influence on the Performance of Solar Cells
Characterisation of Dislocation-Content in Multicrystalline-Silicon Wafers
The Impact of Dislocation Structure on Impurity Decoration of Dislocation Clusters in Multicrystalline Silicon
Analysis of Inhomogeneous Dislocation Distribution in Multicrystalline Si
Properties of Strong Luminescence at 0.93 eV in Solar Grade Silicon
10 cm Diameter Mono Cast Si Growth and its Characterization
Characterization of Residual Strain in Si Ingots Grown by the Seed-Cast Method
III. Characterisation of Silicon for Solar Cells
Overview and Latest Developments in Photoconductance Lifetime Measurements in Silicon
Efficiency-Limiting Recombination in Multicrystalline Silicon Solar Cells
Photoluminescence Imaging of Silicon Bricks
Inline PL Inspection and Advanced Offline Evaluation of Passivation Defects, Charge and Interfaces
Transition Metal Precipitates in Mc Si: A New Detection Method Using 3D-FIB
A Comparison of EBIC, LBIC and XBIC Methods as Tools for Multicrystalline Si Characterization
IV. Intrinsic Point Defects in Silicon
Properties of Point Defects in Silicon: New Results after a Long-Time Debate
Fast and Slow Vacancies in Silicon
Theoretical Study of the Impact of Stress on the Behavior of Intrinsic Point Defects in Large-Diameter Defect-Free Si Crystals
V. Light Impurities in Silicon-Based Materials
First Principle Study of the Diffusion of Oxygen and Oxygen Complexes in Si, SiGe Solid Solutions and Si Nanocrystals
The Trivacancy and Trivacancy-Oxygen Family of Defects in Silicon
Monoisotopic 28Si in Spin Resonance Spectroscopy of Electrons Localized on Shallow Donors
Light-Element Impurities and their Reactions in Multicrystalline Si
Isotope-Dependent Phonon Trapping at Defects in Semiconductors
Formation of Single and Double Donor States of Trivacancy-Oxygen Complexes in P-Type Silicon
Interactions of Self-Interstitials with Interstitial Carbon-Interstitial Oxygen Center in Irradiated Silicon: An Infrared Absorption Study
PL and DLTS Analysis of Carbon-Related Centers in Irradiated P-Type Cz-Si
Infrared Defect Dynamics of Irradiation Induced Complexes in CZ Silicon - C-Rich Case
Calibration of IR Absorbance in Highly Nitrogen Doped Silicon
Dislocation Motions in Czochralski Silicon Wafers Treated by Rapid Thermal Processing under Different Atmospheres
VI. Metals in Silicon: Fundamental Properties and Gettering
New Results on the Electrical Activity of 3d-Transition Metal Impurities in Silicon
Metastable CuVO* Complex in Silicon
Deep Energy Levels of Platinum-Hydrogen Complexes in Silicon
Association of FeB Pairs under Illumination
Proximity Gettering of Slow Diffuser Contaminants
Influence of Cu Concentration on the Getter Efficiency of Dislocations and Oxygen Precipitates in Silicon Wafers
Polycrystalline Silicon Gettering Layers with Controlled Residual Stress
VII. Extended and Implantation-Related Defects in Silicon
Charge Carrier Transport along Grain Boundaries in Silicon
Impact of Electric Field on Thermoemission of Carriers from Shallow Dislocation-Related Electronic States
Fabrication of Light-Emitting Diodes with Dislocation-Related Luminescence by Annealing of Electron-Irradiated Silicon
Multiple Proton Implantations into Silicon: A Combined EBIC and SRP Study
Positron Probing of Vacancy Volume of Thermally Stable Deep Donors Produced with 15 MeV Protons in n-FZ-Si:P Crystals
Radiation Damage of Carrier Lifetime and Conductivity in Sn and Pb Doped n-Si
VIII. Surfaces, Passivation and Processing
Effect of Hydrogen for Preservation of Reconstructed Surfaces
Kinetics of Hydrogen Motion via Dislocation Network in Hydrophilically Direct Bonded Silicon Wafers
Electric Field Effect Surface Passivation for Silicon Solar Cells
Effect of Ultrasonic Treatment on the Defect Structure of the Si-SiO2 System
Characterization of Electrical Contacts on Silicon (100) after Ablation and Sulfur Doping by Femtosecond Laser Pulses
Smoothening by Self-Diffusion of Silicon during Annealing in a Rapid Processing Chamber
Anisotropy of the Porous Layer Formation Rate in Silicon with Various Acceptor Concentrations
Queue Time Sensitivity Analysis Methodology
IX. Germanium-Based Devices and Materials
Luminescence from Germanium and Germanium on Silicon
High n-Type Doping in Ge for Optical Gain and Lasing
Reduction of Structural Defects in Ge Epitaxially Grown on Nano-Structured Si Islands on SOI Substrate
Study of Photovoltage Decays in Nanostructured Ge/Si
Vacancy-Related Defects in Ge Doped with Tin
First-Principles Analysis on Interaction between Dopant (Ga, Sb) and Contamination Metal Atoms in Ge Crystals
Production and Annealing of Defects in Proton-Irradiated n-Ge
X. Semiconductors other than Silicon and Germanium
Influences of Charged Dislocations on Performance of III-V Compound Semiconductor FinFETs
Unstable Luminescence and "Memory Effect" in Nitrides Irradiated by Electron Beam
Silicon and Oxygen in High-Al-Content AlGaN: Incorporation Kinetics and Electron Paramagnetic Resonance Study
Defect Control in Zinc Oxynitride Semiconductor for High-Performance and High-Stability Thin-Film Transistors
Point Defects in 4H-SiC Epilayers Introduced by 4.5 MeV Electron Irradiation and their Effect on Power JBS SiC Diode Characteristics
Investigation of Point Defects Modification in Silicon Dioxide by Cathodoluminescence
XI. Nanostructures and New Materials Systems
Synthesis and Light Absorption Mechanism in Si or Ge Nanoclusters for Photovoltaics Applications
Homo- and Hetero-Structure Formation in Semiconductors by Laser Radiation: First Stage of Quantum Cones Formation
Electrical and Optical Characterisation of Silicon Nanocrystals Embedded in SiC
Electronic States and Optical Gap of Phosphorus-Doped Silicon Nanocrystals Embedded in a Silica Host Matrix
Photoluminescence and Raman Scattering Behavior of Si Rich Silicon Oxynitride Films Annealed at Different Temperatures
Defects Related to Sb-Mediated Ge Quantum Dots
ZnO Nanoparticle Formation in Si by Co-Implantation of Zn+ and O+ Ions

Erscheint lt. Verlag	6.1.2014
Reihe/Serie	Solid State Phenomena
Zusatzinfo	Illustrations, unspecified
Verlagsort	Zurich
Sprache	englisch
Maße	170 x 240 mm
Gewicht	1000 g
Themenwelt	Technik ► Elektrotechnik / Energietechnik
Themenwelt	Technik ► Maschinenbau
ISBN-10	3-03785-824-9 / 3037858249
ISBN-13	978-3-03785-824-0 / 9783037858240
Zustand	Neuware