High-Bandwidth Memory Interface

Chulwoo Kim, Hyun-Woo Lee, Junyoung Song (Autoren)

Buch | Softcover

VIII, 88 Seiten

2013
Springer International Publishing (Verlag)
978-3-319-02380-9 (ISBN)

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This book provides an overview of recent advances in memory interface design at both the architecture and circuit levels. Coverage includes signal integrity and testing, TSV interface, high-speed serial interface including equalization, ODT, pre-emphasis, wide I/O interface including crosstalk, skew cancellation, and clock generation and distribution. Trends for further bandwidth enhancement are also covered.

An introduction to high-speed DRAM.- An I/O Line Configuration and Organization of DRAM.- Clock generation and distribution.- Transceiver Design.- TSV Interface for DRAM.

Erscheint lt. Verlag	18.11.2013
Reihe/Serie	SpringerBriefs in Electrical and Computer Engineering
Zusatzinfo	VIII, 88 p. 91 illus., 41 illus. in color.
Verlagsort	Cham
Sprache	englisch
Maße	155 x 235 mm
Gewicht	161 g
Themenwelt	Technik ► Elektrotechnik / Energietechnik
Schlagworte	DRAM • DRAM Circuit Design • DRAM Interface Design • High-Bandwidth Memory Interface • High Performance Memory Design • TSV Interface for DRAM
ISBN-10	3-319-02380-2 / 3319023802
ISBN-13	978-3-319-02380-9 / 9783319023809
Zustand	Neuware