Computational Single-Electronics
Springer Wien (Verlag)
978-3-211-83558-6 (ISBN)
1 Introduction.- 1.1 Single-Electronics — Made Easy.- 1.2 A Historical Look Back.- 2 Theory.- 2.1 Orthodox Single-Electron Theory.- 2.2 Time and Space Correlations.- 2.3 Master Equation of Electron Transport.- 2.4 Extensions to the Orthodox Theory.- 3 Simulation Methods and Numerical Algorithms.- 3.1 Monte Carlo Method.- 3.2 Solution of the Master Equation.- 3.3 Coupling with SPICE.- 3.4 Free Energy.- 3.5 Tunnel Transmission Coefficient.- 3.6 Energy Levels.- 3.7 Evaluation Schemes for Cotunneling.- 3.8 Rate Calculation Including Electromagnetic Environment.- 3.9 Numerical Integration of Tunnel Rates.- 3.10 Time-Dependent Node Voltages and Node Charges.- 3.11 Stability Diagram and Stable States.- 3.12 Capacitance Calculations.- Circuits and Applications.- 4.1 Fundamental Circuits.- 4.2 Metrology Applications.- 4.3 Memory.- 4.4 Logic.- 4.5 Interfacing to CMOS.- 4.6 Exotic Circuits.- 4.7 Evolutionary Circuit Design.- 5 Random Background Charges.- 5.1 The Good Side of High Charge Sensitivity.- 5.2 Solutions on the Material Level.- 5.3 Solutions on the Device Level.- 5.4 Solutions on the Circuit and System Level.- 6 Manufacturing Methods and Material Systems.- 6.1 Shadow Evaporation.- 6.2 Step-Edge Cutoff.- 6.3 Nanoimprint.- 6.4 Planar Quantum Dots.- 6.5 Scanning Probe Microscopy.- 6.6 Granular Films.- 6.7 Self-Assembled Structures.- 6.8 Outlook.- Appendixes.- A Fermi’s Golden Rule.- B Capacitance and Resistance Extraction from Measured Data.- C Analytic Solutions of the Cotunneling Rate.- D Algorithms from Number Theory.- E Convex Hull of Point Set.- F Analytic Capacitance Calculation.- References.
"This is a well written book offering a clear and detailed insight into physical processes and numerical procedures essential to the single-electron dynamics in electro-conducting media. The subject of the book is a rapidly developing scientific field which is interesting not only from a purely theoretical point of view but also attracts attention due to a variety of application possibilities in contemporary micro-electronics. The book may be useful both to students as a textbook, and to a more general scientific community dealing with problems involving a single electron dynamics in solids ..." Zentralblatt für Mathematik und ihre Grenzgebiete Vol. 1013/No. 13/2003
Erscheint lt. Verlag | 29.6.2001 |
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Reihe/Serie | Computational Microelectronics |
Zusatzinfo | X, 280 p. |
Verlagsort | Vienna |
Sprache | englisch |
Maße | 155 x 235 mm |
Gewicht | 672 g |
Themenwelt | Technik ► Elektrotechnik / Energietechnik |
Schlagworte | algorithms • Circuit Design • Circuits • CMOS • Complexity • Computer-Aided Design (CAD) • Devices/Tunneleffekt • Elektronen • Elektronik • Geräte • Integrated circuit • Logic • metal-oxide-semiconductor transistor • Monte Carlo • Monte Carlo Method • Number Theory • quantum dot • Schaltkreise • Simulation • single-electronics • single-electron transistor • stability • static-induction transistor • tunneling |
ISBN-10 | 3-211-83558-X / 321183558X |
ISBN-13 | 978-3-211-83558-6 / 9783211835586 |
Zustand | Neuware |
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