Blick ins Buch

High-mobility two-dimensional hole gases in III-V semiconductor heterostructures: growth and transport properties

Marika Hirmer (Autor)

Buch | Softcover

144 Seiten

2013
Universitätsverlag Regensburg
9783868450958 (ISBN)

Lese- und Medienproben

Inhaltsverzeichnis (PDF)

Titel ist leider vergriffen;
keine Neuauflage

Artikel merken

In this work, we investigated very high quality carbon-doped two-dimensional hole gases (2DHGs). The first part deal with high-mobility GaAs/AlGaAs quantum wells (QWs). Optimizing the heterostructure design, the hole mobility was extremely increased. Quantum Hall effect, photoconductivity effect, Rashba spin splitting, fractional quantum Hall effect (revealing interesting anisotropy in the thermally activated transport) and the band structure were investigated. In the second part, we studied InAs/InGaAs/InAlAs QWs with high spin-orbit coupling. A great success was the preparation of a carbon p-type doping in QWs with high indium content. A conductivity type inversion from p- to n-type with changing composition was observed. The heterostructures exhibit weak-antilocalization, hole-hole interaction effect and strong transport anisotropy. The spin splitting can be engineered providing small changes in the structure design. Both topics are of major interest for spintronics research.

Erscheint lt. Verlag	19.2.2013
Reihe/Serie	Dissertationsreihe Physik ; 29
Zusatzinfo	49 farb. Abb.
Sprache	deutsch
Maße	170 x 240 mm
Gewicht	374 g
Themenwelt	Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik
	Naturwissenschaften ► Physik / Astronomie ► Theoretische Physik
	Technik ► Elektrotechnik / Energietechnik
Schlagworte	Condensed matter physics • growth • Heterostructure • hole gases • Physics • semiconductor • Solid state physics • Transport
ISBN-13	9783868450958 / 9783868450958
Zustand	Neuware