Low-Frequency Noise in Semiconductors
Springer-Verlag New York Inc.
978-1-4614-2091-0 (ISBN)
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This book explains in a straightforward manner the complex phenomenon of low-frequency noise, its physical origin and mechanism in Metal Oxide Semiconductor devices. Coverage includes the physics and math of noise, how to characterize, simulate and model noise at a device and circuit level, as well as its relationship to other device parameters. Readers will learn how either to optimize or minimize this parameter at different levels of semiconductor processes and design, its impact on device and circuit reliability, what forms would it take and how would it behave under various circumstances. Detailed explanations are included of what would be the impact of low-frequency noise on different types of devices and circuits in various electrical/physical environments, how and when to identify its criticality during circuit design, how to suppress its behavior by effective engineering and the trade-offs for a successful product design.
Purushothaman Srinivasan (SP) is currently a Member of Technical Staff at Texas Instruments, Dallas. He has been involved in the research and development of advanced CMOS devices for low power applications with emphasis on low-frequency (1/f) noise and Random Telegraph Signals (RTS) since 2007. He is also an Executive Committee member and Membership Chair of Dielectric Science and Technology Division at ECS. His activities also include organizer for ECS graphene symposia and More-than-Moore symposia. He currently serves in the SRC Technical Advisory Board and is a liaison member of various SRC projects. Prior to joining TI, he obtained his PhD degree from IMEC, Leuven, Belgium and New Jersey Institute of Technology, Newark, NJ in 2007. He spent his summer of 2006 as a researcher at IBM T. J. Watson Research Center, Yorktown Heights, NY. He won the Hashimoto Prize for his best doctoral dissertation in 2007. He is also a senior member of IEEE, has edited 5 books, holds 3 patents, authored and co-authored more than 70 international publications, including IEDM and VLSI conferences. He also serves as a reviewer for at least 6 journals, including the Journal of The Electrochemical Society and IEEE Transactions on Electron Devices.
Low-frequency Noise.- Introduction, History and Background.- Flicker (1/f) Noise.- Basic concept and science, Scaling and Technology Requirements.- RTS and Flicker noise in passives, BJTs and MOS devices.- Flicker Noise characterization in MOSFETs.- Noise simulation and modeling in MOS systems.- Cyclo-stationary noise in semiconductor devices.- Effect of semiconductor processes on low-frequency noise.- Noise dispersion and variability in MOSFETs.- Low-frequency noise in advanced CMOS devices.- Device Reliability and low-frequency noise.- Flicker noise and phase noise.- Correlation and its relationship in amplifiers and oscillators.- Flicker noise in photodiodes and detectors.- Flicker Noise reduction techniques.- RTS noise in Static Random Memories.- RTS noise in extremely scaled devices.- MOSFETs, nanotubes, nanowires and carbon based future devices. - Characterization, simulation and modeling.
| Erscheint lt. Verlag | 28.3.2014 |
|---|---|
| Zusatzinfo | 150 black & white illustrations |
| Verlagsort | New York, NY |
| Sprache | englisch |
| Maße | 155 x 235 mm |
| Einbandart | gebunden |
| Themenwelt | Technik ► Elektrotechnik / Energietechnik |
| Schlagworte | Circuit reliability • flicker noise • Halbleiter • Low-frequency noise in semiconductors • Noise in Integrated Circuits • Noise in MOS Devices • Noise simulation and modeling • Random Telegraph Signal (RTS) • RTS Noise |
| ISBN-10 | 1-4614-2091-1 / 1461420911 |
| ISBN-13 | 978-1-4614-2091-0 / 9781461420910 |
| Zustand | Neuware |
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