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Low Power and Reliable SRAM Memory Cell and Array Design

Koichiro Ishibashi, Kenichi Osada (Herausgeber)

Buch | Hardcover

XII, 144 Seiten

2011
Springer Berlin (Verlag)
978-3-642-19567-9 (ISBN)

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Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.

Preface.- Introduction.- Fundamentals of SRAM Memory Cell.- Electrical Stability.- Sensitivity Analysis.- Memory Cell Design Technique for Low Power SOC.- Array Design Techniques.- Dummy Cell Design.- Reliable Memory Cell Design.- Future Technologies

Erscheint lt. Verlag	18.8.2011
Reihe/Serie	Springer Series in Advanced Microelectronics
Zusatzinfo	XII, 144 p.
Verlagsort	Berlin
Sprache	englisch
Maße	155 x 235 mm
Gewicht	370 g
Themenwelt	Technik ► Elektrotechnik / Energietechnik
Schlagworte	CMOS LSI • CMOS-Schaltungen • memory cell • Reliability • SRAM • SRAM (Static Random Access Memory) • Study
ISBN-10	3-642-19567-9 / 3642195679
ISBN-13	978-3-642-19567-9 / 9783642195679
Zustand	Neuware