Non-Crystalline Films for Device Structures (eBook)

Maurice H. Francombe (Herausgeber)

eBook Download: PDF

2001 | 1. Auflage
265 Seiten
Elsevier Science (Verlag)
978-0-08-054295-9 (ISBN)

Infos

Physics of Thin Films is one of the longest running continuing series in thin film science, consisting of 25 volumes since 1963. The series contains quality studies of the properties of various thin films materials and systems. In order to be able to reflect the development of today's science and to cover all modern aspects of thin films, the series, starting with Volume 20, has moved beyond the basic physics of thin films. It now addresses the most important aspects of both inorganic and organic thin films, in both their theoretical and their technological aspects.

Volume 29 consists of chapters pulled from Hari Singh Nalwa's forthcoming Handbook of Thin Film Materials (ISBN: 0-12-512908-4).
The chapters were selected because they deal exclusively with amorphous film structures and because they have a common relevance to semiconductor, or electronic, devices and circuits. These are subjects not yet stressed in the Thin Films series.

Inhalt

Cover 1
Contents 6
Contributors 8
Preface 10
Chapter 1. Ultrathin Gate Dielectric Films for Si-Based Microelectronic Devices 12
1.1. Introduction 12
1.2. Requirements of Ultrathin Gate Dielectric Films 17
1.3. Ultrathin Gate Dielectric Film Processing 17
1.4. Characterization of Ultrathin Gate Dielectric Films 27
1.5. Hydrogen and Ultrathin Gate Dielectric Films 56
1.6. Silicon Oxide Gate Dielectric Films 63
1.7. Silicon Oxynitride Gate Dielectric Films 93
1.8. Alternative (High-k) Gate Dielectric Films 115
1.9. Final Remarks 133
Acknowledgments 133
References 134
Chapter 2. Electrochemical Passivation of Si and SiGe Surfaces 146
2.1. Introduction 146
2.2. In Situ Characterization of Surface Bond Configurations and Electronic Surface States 148
2.3. Electrochemically Hydrogenated Si Surfaces 170
2.4. Hydrogenated Porous Silicon 193
2.5. Thin Anodic Oxides on Si 211
2.6. Thick Anodic Oxides on Si 235
2.7. Enhanced Passivation of SiGe by Anodic Oxidation 244
Acknowledgments 260
References 260
Index 272
Recent Volumes In This Series 278

Produkt-Details

• Erscheint lt. Verlag: 11.12.2001
• Mitarbeit: Herausgeber (Serie): V. M. Agranovich, Stephen M. Rossnagel, Abraham Ulman
• Sprache: englisch
• Themenwelt: Schulbuch / Wörterbuch
• Themenwelt: Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik
• Themenwelt: Technik ► Elektrotechnik / Energietechnik
• Themenwelt: Technik ► Maschinenbau
• ISBN-10: 0-08-054295-6 / 0080542956
• ISBN-13: 978-0-08-054295-9 / 9780080542959