Processing and Properties of Compound Semiconductors (eBook)

Eicke R. Weber, R. K. Willardson (Herausgeber)

eBook Download: PDF

2001 | 1. Auflage
321 Seiten
Elsevier Science (Verlag)
978-0-08-054101-3 (ISBN)

Infos

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.

Inhalt

Front Cover 1
Processing and Properties of Compound Semiconductors: Semiconductors and Semimetals 4
Copyright Page 5
Contents 6
List of Contributors 10
Chapter 1. Introduction 12
1. Introduction 12
2. Wet Etching 13
References 23
Chapter 2. Gallium Arsenide Heterostructures 26
1. Introduction 26
2. Crystal Growth and Properties of GaAs 33
3. Growth and Material Properties of GaAs Heterostructures 41
4. Physical Properties of GaAs-Based Quantum Well Structures and Superlattices 59
References 66
Chapter 3. Growth and Optical Properties of GaN 74
1. Introduction 74
2. Gallium Nitride and its Growth on Different Substrates 78
3. Line Width and Quantum Beats in GaN 95
4. Time-Resolved Spectroscopy of GaN Epilayers 108
5. p-GaN 110
6. n-GaN 121
7. Optical Pumping and Lasing in GaN Epilayers and Heterostructures 132
8. GaN Quantum Wells 137
References 145
Chapter 4. SiGe/Si Processing 162
1. Introduction 162
2. SiGe/Si Material Properties and Processing Challenges 164
References 203
Chapter 5. Advances in Quantum Dot Structures 210
1. Introduction 210
2. Physical Properties 212
3. State of the Art 220
References 223
Chapter 6. Wet Etching of III–V Semiconductors 226
1. Introduction 226
2. Semiconductor Electrochemistry: Basic Principles and Experimental Methods 229
3. Types of Etching Reactions 249
4. Some Solid-State and Electrochemical Data on III–V Semiconductors 255
5. Kinetics and Mechanisms of Etching Reactions at III–V Semiconductors 257
6. Material-Selective Etching 279
7. Etch Morphologies and Profiles 286
8. Conclusions 303
References 304
Index 308
Contents of Volumes in This Series 312

Produkt-Details

• Erscheint lt. Verlag: 20.10.2001
• Sprache: englisch
• Themenwelt: Schulbuch / Wörterbuch
• Themenwelt: Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik
• Themenwelt: Technik ► Elektrotechnik / Energietechnik
• Themenwelt: Technik ► Maschinenbau
• ISBN-10: 0-08-054101-1 / 0080541011
• ISBN-13: 978-0-08-054101-3 / 9780080541013