Optical Characterization of Microstructures and Optoelectronic Devices Based on Wide Band Gap Semiconductors
Springer Verlag, Singapore
9789819519279 (ISBN)
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This book focuses on the optical characterization of wide band gap semiconductor micro-nano structures and advanced optoelectronic devices including GaN-based laser diodes, GaN-based micro-LEDs, ZnO-based micro-lasers, Ga2O3-based deep UV photodetectors, etc., written by leading scholars in the field from the perspective of applied research and development of advanced optoelectronic devices.
This book consists of 12 chapters, mainly presenting the authors own new findings, new theoretical models and experimental results, which can benefit researchers, engineers and postgraduate students in the field of semiconductor optoelectronics.
Prof. Shijie Xu is currently a distinguished professor in Department of Optical Science and Engineering, Fudan University. Before he joined Fudan University, he worked as a professor with tenure in Department of Physics, The University of Hong Kong. Prof. Xu is interested in luminescence and related phenomena, especially effects of carrier localization and many-body interactions in internal luminescence and relevant optoelectronic processes in wide band gap semiconducts and other solids. He has authored over 170 scientific articles and letters with significant impact in the fields.
Wide band gap semiconductor laser technology and characterization.- Growth and characterization of GaN-based lasers on silicon substrates.- Efficiency characterization of GaN-based LEDs.- Preparation and optoelectronic properties of GaN-based Micro-LEDs.- Key factors restricting the external quantum efficiency of GaN-based micro-LEDsand solutions.- Growth and optical characterization of non-polar and semi-polar GaN-based LEDs.- Construction and characterization of ZnO micro-nano lasers.- Ga2O3 solar blind deep ultraviolet detectors.- Optoelectronic properties and characterization of gallium-doped ZnO.- Optoelectronic process characterization of localized carriers in semiconductors and photovoltaic devices.- Photoluminescence properties and characterization of InGaN/GaN nanowire quantum dots.- Characterization of nonlinear optical properties of ZnO single crystals and micro-nano structures.
| Erscheinungsdatum | 29.11.2025 |
|---|---|
| Reihe/Serie | Wide Bandgap Semiconductors |
| Zusatzinfo | 196 Illustrations, color; 48 Illustrations, black and white |
| Verlagsort | Singapore |
| Sprache | englisch |
| Maße | 155 x 235 mm |
| Themenwelt | Naturwissenschaften ► Physik / Astronomie ► Optik |
| Technik ► Elektrotechnik / Energietechnik | |
| Technik ► Maschinenbau | |
| Schlagworte | advanced optoelectronic devices • carrier localization • device physics • GaN Micro-LEDs • Optical characterization • semiconductor micro structures • semiconductor optoelectronics • wide band gap semiconductor optoelectronic devices • Wide Band Gap Semiconductors • ZnO Micro-lasers |
| ISBN-13 | 9789819519279 / 9789819519279 |
| Zustand | Neuware |
| Informationen gemäß Produktsicherheitsverordnung (GPSR) | |
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