High Speed Heterostructure Devices

R. K. Willardson, Richard A. Kiehl, T. C.L. Gerhard Sollner (Herausgeber)

Buch | Hardcover

454 Seiten

1994
Academic Press Inc (Verlag)
9780127521411 (ISBN)

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Aimed at the graduate student or working researcher, this work includes a review of InP-based HFETs and complementary HFETs. It offers a three-chapter review of resonant tunneling; and provides an emphasis on circuits as well as devices.

Volume 41 includes an in-depth review of the most important, high-speed switches made with heterojunction technology. This volume is aimed at the graduate student or working researcher who needs a broad overview andan introduction to current literature.

Prof. Dr. Eicke R. Weber, Fraunhofer-Institut fur Solare Energiesysteme ISE, Freiburg, Germany

F. Capasso, F. Beltram, S. Sen, A. Palevski, and Y.A. Cho, Quantum Electron Devices: Physics and Applications. P. Solomon, D.J. Frank, S.L. Wright, and F. Canora, GaAs-Gate Semiconductor-Insulator-Semiconductor FET.M.M. Hashemi and U.K. Mishra, Unipolar InP-Based Transistors. R.A. Kiehl, Complementary Heterostructure FET Integrated Circuits. T. Ishibashi, GaAs-Based and InP-Based Heterostructure Bipolar Transistors. H.C. Liu and T.C.L.G. Sollner, High Frequency Resonant-Tunneling Devices. H. Ohnishi, T. Mori, M. Takatsu, K. Imamura, and N. Yokoyama, Resonant-Tunneling Hot-Electron Transistors and Circuits. References. Index.

Erscheint lt. Verlag	6.7.1994
Reihe/Serie	Semiconductors and Semimetals
Mitarbeit	Herausgeber (Serie): Albert C. Beer, Eicke R. Weber
Verlagsort	San Diego
Sprache	englisch
Maße	152 x 229 mm
Gewicht	820 g
Themenwelt	Naturwissenschaften ► Physik / Astronomie ► Elektrodynamik
Themenwelt	Technik ► Elektrotechnik / Energietechnik
ISBN-13	9780127521411 / 9780127521411
Zustand	Neuware