Asia-Pacific Conference on Silicon Carbide and Related Materials 2022
- Titel nicht im Sortiment
- Artikel merken
Aggregated Book
Full-text papers selected by peer review from the submissions to the Asia Pacific Conference on Silicon Carbide and Related Materials (APCSRM 2022, November 14-16, 2022, Xuzhou, China) and presented in this book cover cutting-edge research on silicon carbide and related materials in the direction of materials, devices, and applications.
Preface
Chapter 1: Semiconductor Materials for Power Electronics
Electrical Properties of Heavily Al-Doped 4H-SiC
A Method to Simulate Extrinsic Light Excitation of Vanadium-Compensated 6H-SiC
Characterization of SiC/SiO2 Interface State under Different NO Annealing
Chapter 2: Power Deviсes Designing
The Gate Oxide Breakdown Failures of 4H-SiC MOS Devices
Simulation of Threshold Voltage Instability of 4H-SiC MOSFET
The Investigation of 1200V SiC MOSFET Short-Circuit Ruggedness and Turn-Off Current Tail
Factors Affecting Bias Temperature Instability in 4H-SiC MOS Capacitors
Reaction Kinetics Investigation of Ni Ohmic Contacts on N-Type 4H-SiC
Influence of Acceptor Incomplete Ionization in p+ Emitter on SiC LTT with n-Type Blocking Base
Structure and the Thermal Management of a 3-D Silicon Carbide MOSFET Module
Automatic Design of a Busbar in SiC Controller
| Erscheinungsdatum | 24.10.2023 |
|---|---|
| Reihe/Serie | Scientific Books Collection |
| Sprache | englisch |
| Maße | 170 x 240 mm |
| Gewicht | 320 g |
| Themenwelt | Naturwissenschaften ► Physik / Astronomie ► Atom- / Kern- / Molekularphysik |
| Technik ► Elektrotechnik / Energietechnik | |
| Technik ► Maschinenbau | |
| Schlagworte | Electrical Properties • Gate Oxide Breakdown • Integrated Circuit Packaging • MOS Capacitor • MOSFET • power device • Power Electronics • Silicon carbide |
| ISBN-10 | 3-0364-0053-2 / 3036400532 |
| ISBN-13 | 978-3-0364-0053-2 / 9783036400532 |
| Zustand | Neuware |
| Informationen gemäß Produktsicherheitsverordnung (GPSR) | |
| Haben Sie eine Frage zum Produkt? |
aus dem Bereich
