The Physics of Semiconductor Devices

Proceedings of IWPSD 2017

Media-Kombination

LVII, 1299 Seiten | Ausstattung: Hardcover

2019
Springer International Publishing
978-3-319-97603-7 (ISBN)

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This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community.
The book discusses the latest developments in the field of III-nitrides; materials & devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy and characterization, graphene and other 2D materials and organic semiconductors.

Enhanced Photodetection in Visible Region in rGo/GaN Based Hybrid Photodetector.- ZigZag Phosphorene Nanoribbons Antidot âEUR" Electronic structure and Device Application.- Calculation of Quantum Capacitance and Sheet Carrier Density of Graphene FETs.- Effect of Back Gate Voltage on Double Gate Single Layer Graphene Field-Effect Transistor with Improved ION.- Effects of chemical functionalization on single-walled carbon nanotubes by mild hydrogen peroxide for PV applications.- Effect of tip induced strain on nanoscale electrical properties of MoS2-Graphene heterojunctions.- Optimization of the concentration of molybdenum disulfide (MoS2) for formation of atomically thin layers.- Fabrication of 2D NEMS on flexible substrates for strain engineering in sensing applications.- Transition metal doped ZnS monolayer: The first principles insights.- Tuning Resonant Wavelength of Silicon Micro-ring Resonator with Graphene.- Diameter Dependent Band Gap Properties of Different Structures of Single-walled Carbon.-Limitations of Mott-Schottky Analysis for Organic Metal-Insulator-Semiconductor Capacitors.

Erscheint lt. Verlag	1.2.2019
Reihe/Serie	Springer Proceedings in Physics
Zusatzinfo	LVII, 1299 p. 824 illus., 656 illus. in color. In 2 volumes, not available separately.
Verlagsort	Cham
Sprache	englisch
Maße	155 x 235 mm
Gewicht	2251 g
Themenwelt	Naturwissenschaften ► Chemie ► Analytische Chemie
	Naturwissenschaften ► Physik / Astronomie ► Atom- / Kern- / Molekularphysik
	Technik ► Elektrotechnik / Energietechnik
Schlagworte	compound semiconductors • Crystal growth, epitaxy and characterization • Graphene and 2D materials • III-Nitrides materials and devices • IWPSD 2017 • Semiconductors for quantum computing • VLSI technology
ISBN-10	3-319-97603-6 / 3319976036
ISBN-13	978-3-319-97603-7 / 9783319976037
Zustand	Neuware