GaAs nanowires: Epitaxy, crystal structure-related properties and magnetic heterostructures
Seiten
2016
Universitätsverlag Regensburg
9783868451320 (ISBN)
Universitätsverlag Regensburg
9783868451320 (ISBN)
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The intention of this work is twofold:
On the one hand, we explore the controlability of GaAs nanowire growth concerning orientation, shape and crystal structure. These are necessary steps, since the growth of GaAs nanowires proceeds not necessarily uniformly, and in GaAs nanowires the in bulk unstable wurtzite phase, and the usual observed zinc-blende crystal phase may coexist in one and the same nanowire.
On the other hand, we include ferromagnetic materials into GaAs nanowires. To do that, we produce either "core/shell" structures, where the GaAs nanowire is coated with a ferromagnetic "shell" material, or grow ferromagnetic nanoscale segments in GaAs nanowires.
On the one hand, we explore the controlability of GaAs nanowire growth concerning orientation, shape and crystal structure. These are necessary steps, since the growth of GaAs nanowires proceeds not necessarily uniformly, and in GaAs nanowires the in bulk unstable wurtzite phase, and the usual observed zinc-blende crystal phase may coexist in one and the same nanowire.
On the other hand, we include ferromagnetic materials into GaAs nanowires. To do that, we produce either "core/shell" structures, where the GaAs nanowire is coated with a ferromagnetic "shell" material, or grow ferromagnetic nanoscale segments in GaAs nanowires.
| Erscheinungsdatum | 29.03.2016 |
|---|---|
| Reihe/Serie | Dissertationsreihe Physik ; 48 |
| Zusatzinfo | 26 schw.-w. u. 49 farb. Abb. |
| Sprache | englisch |
| Maße | 170 x 240 mm |
| Gewicht | 444 g |
| Themenwelt | Naturwissenschaften ► Physik / Astronomie ► Theoretische Physik |
| Schlagworte | Heterostructures • Nanotechnologie • Nanowires • Physik |
| ISBN-13 | 9783868451320 / 9783868451320 |
| Zustand | Neuware |
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Buch | Softcover (2022)
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