Fundamentals of III-V Semiconductor MOSFETs
Springer-Verlag New York Inc.
978-1-4899-8406-7 (ISBN)
Non-Silicon MOSFET Technology: A Long Time Coming.- Properties and Trade-Offs of Compound Semiconductor MOSFETs.- Device Physics and Performance Potential of III-V Field-Effect Transistors.- Theory of HfO2-Based High-k Dielectric Gate Stacks.- Density Functional Theory Simulations of High-k Oxides on III-V Semiconductors.- Interfacial Chemistry of Oxides on III-V Compound Semiconductors.- Atomic-Layer Deposited High-k/III-V Metal-Oxide-Semiconductor Devices and Correlated Empirical Model.- Materials and Technologies for III-V MOSFETs.- InGaAs, Ge, and GaN Metal-Oxide-Semiconductor Devices with High-k Dielectrics for Science and Technology Beyond Si CMOS.- Sub-100 nm Gate III-V MOSFET for Digital Applications.- Electrical and Material Characteristics of Hafnium Oxide with Silicon Interface Passivation on III-V Substrate for Future Scaled CMOS Technology.- p-type Channel Field-Effect Transistors.- Insulated Gate Nitride-Based Field Effect Transistors.- Technology/Circuit Co-Design for III-V FETs.
Erscheint lt. Verlag | 28.11.2014 |
---|---|
Zusatzinfo | XV, 445 p. |
Verlagsort | New York |
Sprache | englisch |
Maße | 155 x 235 mm |
Themenwelt | Naturwissenschaften ► Chemie ► Analytische Chemie |
Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik | |
Technik ► Elektrotechnik / Energietechnik | |
ISBN-10 | 1-4899-8406-2 / 1489984062 |
ISBN-13 | 978-1-4899-8406-7 / 9781489984067 |
Zustand | Neuware |
Haben Sie eine Frage zum Produkt? |
aus dem Bereich