Defects in SiO2 and Related Dielectrics: Science and Technology
Kluwer Academic Publishers (Verlag)
9780792366850 (ISBN)
This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.
0.- Structure and topology.- Defect-free vitreous networks: The idealised structure of SiO2 and related glasses.- Topology and topological disorder in silica.- Bulk defects.- Optical properties of defects in silica.- The natures of point defects in amorphous silicon dioxide.- Ab initio theory of point defects in SiO2.- A demi-century of magnetic defects in ?-quartz.- Interaction of SiC2 glasses with high energy ion beams and vacuum UV excimer laser pulses.- Excitons, localized states in silicon dioxide and related crystals and glasses.- Gamma rays induced conversion of native defects in natural silica.- Ge and Sn doping in silica: structural changes, optically active defects, paramagnetic sites.- Computational studies of self-trapped excitons in silica.- Surface defects.- Defects on activated silica surface.- Ab-initio molecular dynamics simulation of amorphous silica surface.- Bragg grating.- Periodic UV-induced index modulations in doped-silica optical fibers: formation and properties of the fiber Bragg grating.- Bulk silicas prepared by low pressure plasma CVD: formation of structure and point defects.- Change of spectroscopic and structural properties of germanosilicate glass under mechanical compression and UV irradiation.- UV photoinduced phenomena in oxygen-deficient silica glasses.- One- and two-quantum UV photo-reactions in pure and doped silica glasses. 2. Germanium oxygen deficient centers (GODC).- Photoinduced refractive index change and second harmonic generation in MCVD germanosilicate core fibres fabricated in reduced (nitrogen and helium) atmospheres.- Si/SiC2 interface and gate dielectrics.- Molecular hydrogen interaction kinetics of interfacial Si dangling bonds in thermal (111)Si/SiO2. An electron spin resonance saga.- Ultrathin oxide films foradvanced gate dielectrics applications Current progress and future challenges.- SiC/SiO2 interface defects.- Point defects in Si-SiO2 systems: current understanding.
| Erscheint lt. Verlag | 31.12.2000 |
|---|---|
| Reihe/Serie | NATO Science Series II: Mathematics, Physics and Chemistry ; 2 |
| Zusatzinfo | 87 Illustrations, black and white; VIII, 624 p. 87 illus. |
| Sprache | englisch |
| Maße | 155 x 235 mm |
| Themenwelt | Naturwissenschaften ► Physik / Astronomie ► Elektrodynamik |
| Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik | |
| Naturwissenschaften ► Physik / Astronomie ► Thermodynamik | |
| Technik ► Maschinenbau | |
| ISBN-13 | 9780792366850 / 9780792366850 |
| Zustand | Neuware |
| Informationen gemäß Produktsicherheitsverordnung (GPSR) | |
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