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Silicon Carbide and Related Materials 2011 -

Silicon Carbide and Related Materials 2011

Buch | Softcover
1500 Seiten
2012 | 1., Aufl.
Trans Tech (Verlag)
978-3-03785-419-8 (ISBN)
CHF 489,95 inkl. MwSt
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A collection of peer-reviewed papers that intends to present progress in crystal growth, in the characterization and control of material properties, as well as in other basic research issues concerning silicon carbide (SiC) and other wide-bandgap semiconductors such as group-III nitrides and diamond.
The aim of this special collection of peer-reviewed papers is to present recent progress in crystal growth, in the characterization and control of material properties, as well as in other basic research issues concerning silicon carbide (SiC) and other wide-bandgap semiconductors such as group-III nitrides and diamond. The latest research results relevant to wafer production processes, device fabrication technologies and device applications are discussed. These included the latest results in the development and commercialization of advanced devices and circuits used for energy saving, high-voltage switching, high-frequency high-power amplification and high-temperature operation. Work on the growth, characterization and device exploitation of epitaxial graphene was also covered. Evolving industrial products and capabilities were also highlighted.
Reihe/Serie Materials Science Forum ; 717-720
Verlagsort Zurich
Sprache englisch
Maße 170 x 245 mm
Einbandart Paperback
Themenwelt Naturwissenschaften Physik / Astronomie
Technik Maschinenbau
Schlagworte Engineering • Werkstoffe
ISBN-10 3-03785-419-7 / 3037854197
ISBN-13 978-3-03785-419-8 / 9783037854198
Zustand Neuware
Informationen gemäß Produktsicherheitsverordnung (GPSR)
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