Physical Chemistry of, in and on Silicon
Springer Berlin (Verlag)
978-3-642-73506-6 (ISBN)
1. Silicon.- 1.1 Elemental Silicon.- 1.2 Silicon Metallurgy.- 1.3 Single-Crystal Growth.- 1.4 Mechanical Properties.- 2. Silicon Phases.- 2.1 Diamond-Cubic Silicon.- 2.2 Diamond-Hexagonal Silicon.- 2.3 Amorphous Silicon.- 3. Equilibrium Defects.- 3.1 Vacancies.- 3.2 Self-Interstitials.- 3.3 Vacancy-Self-Interstitial Pair.- 3.4 Stacking Faults.- 4. Impurities.- 4.1 Impurity Content.- 4.2 Oxygen.- 4.3 Oxygen Precipitates.- 5. Dopants.- 5.1 The Standard Theory.- 5.2 Group V Donors.- 5.3 Group III Acceptors.- 5.4 Generation-Recombination Phenomena.- 6. Defect-Impurity Interactions.- 6.1 Defect Influence on Impurities.- 6.2 Impurity Influence on Defects.- 6.3 Impurity-Impurity Interactions.- 7. The High Density Limit.- 7.1 Transition Metals.- 7.2 Substitutional Impurities.- 7.3 General Correlations.- 8. Surfaces and Interfaces.- 8.1 Amorphous SÍO2.- 8.2 The Si-SiO2 Interface.- 8.3 Oxidation Kinetics.- 8.4 Surface Reconstructibility.- 9. Gettering.- 9.1 External Gettering.- 9.2 Internal Gettering.- 9.3 Heavy-Metal Gettering.- 9.4 Gettering and Device Processing Architecture.- 10.Device Processing.- 10.1 The MOS Structure.- 10.2 MOS Technology.- 10.3 A Look to the Future.- References.- Acronyms and Abbreviations.
Erscheint lt. Verlag | 16.12.2011 |
---|---|
Reihe/Serie | Springer Series in Materials Science |
Mitarbeit |
Gast Herausgeber: Hans-Joachim Queisser |
Zusatzinfo | VIII, 122 p. |
Verlagsort | Berlin |
Sprache | englisch |
Maße | 155 x 235 mm |
Gewicht | 218 g |
Themenwelt | Naturwissenschaften ► Chemie ► Physikalische Chemie |
Technik ► Elektrotechnik / Energietechnik | |
Technik ► Maschinenbau | |
Schlagworte | Chemistry • defects • Oxidation • Physical Chemistry • Silicon • Surface |
ISBN-10 | 3-642-73506-1 / 3642735061 |
ISBN-13 | 978-3-642-73506-6 / 9783642735066 |
Zustand | Neuware |
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