Semiconducting Silicides

Basics, Formation, Properties

Victor E. Borisenko (Autor)

Buch | Softcover

XVI, 348 Seiten

2011 | 1. Softcover reprint of the original 1st ed. 2000
Springer Berlin (Verlag)
978-3-642-64069-8 (ISBN)

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Semiconductors are well known as the main materials of modem solid-state electronics. They have held the attention of researches and engineers since the brilliant invention of the semiconductor transistor by Bardeen, Brattain and v V Shockley in the middle ofthe 20th century. Silicon, germanium, AIIIB and AIIB ) compounds have been widely used in discrete semiconductor devices and microelectronic and nanoelectronic integrated systems. Each ofthese materials has separately met specific physical and technological requirements to provide formation ofsolid-state structures with the best electronic or optical performance. However, attempts to combine them within integrated circuit appear to be ineffective or even technologically impossible. Thus, material and related technological compatibilities are important for further progress, particularly in microelectronics, optoelectronics and nanoelectronics. This stimulates an increasing interest in silicides and silicon-germanium alloys, which provide new prospects for silicon-based integration. Elements from the Periodic Table form more than 180 silicides, which are chemical compounds of silicon with different metals. Most of them, except the silicides of lanthanides and actinides, are shown in Table 1. Along with appropriate compatibility with silicon and easy formation by silicidation in a metal-silicon couple, silicides are characterized by high thermal stability and resistance to oxidation. The majority ofthem are metallic and have low resistivity. Exactly metallic silicides were first employed for interconnections, gates in MOS structures, ohmic contacts, and Schottky barriers in silicon integrated circuits. For a comprehensive overview of their properties and general features of the formation technology the reader may address the books and reviews [1-10].

Victor E. Borisenko graduated in 1973 from the Belarusian State University of Informatics and Radioelectronics (BSUIR) as an engineer in semiconductor electronics. He received his first doctorate in physics and mathematics in 1980, his second one in 1988. Since 1990, he has held positions as a professor in many universities worldwide, including the University of Salford in England, the University of Wuppertal in Germany and the University of Electro-Communications in Tokyo, Japan. He now holds a chair as professor and vice-rector of BSUIR and acts as supervisor of the Interuniversity Center of Nanoelectronics and Novel Materials. Since 1995, Professor Borisenko organizes the international conference on physics, chemistry and applications of nanostructures `Nanomeeting? His research team focuses on fundamental electronic and optical properties of semiconducting silicides and low dimensional silicon based nanostructures, carrier transport in semiconductor/dielectric multiquantum wells and DNA, design of novel nanoelectronics and nanophotonic devices, quantum computing.

1 General Material Aspects.- 1.1 Crystalline Structure and Mechanical Properties.- 1.2 Thermodynamics of Silicidation.- 1.3 Kinetics of Silicidation.- 1.4 Thermal Oxidation of Silicides.- 2 Thin Film Silicide Formation.- 2.1 Silicides and Silicon Epitaxial Relationships.- 2.2 Diffusion Synthesis.- 2.3 Ion Beam Synthesis.- 2.4 Atomic and Molecular Deposition.- 2.5 General Comments on Silicide Formation Techniques.- 3 Crystal Growth.- 3.1 Methods of Crystal Growth and Material Problems.- 3.2 Crystal Growth by Chemical Vapor Transport Reactions.- 3.3 Crystal Growth from the Flux.- 3.4 Crystal Growth from the Melt.- 3.5 Summary.- 4 Fundamental Electronic and Optical Properties.- 4.1 Basic Relationships.- 4.2 Electronic Band Structure.- 4.3 Interband Optical Spectra.- 4.4 Light Emission.- 4.5 Infrared Optical Response and Raman Scattering.- 4.6 Concluding Remarks.- 5 Transport Properties.- 5.1 Free Charge Carriers and Their Mobility in Semiconductors.- 5.2 Experimental Resistivities.- 5.3 Mobility of Charge Carriers.- 5.4 Thermoelectric Properties.- 5.5 Concluding Remarks.- References.

Erscheint lt. Verlag	27.9.2011
Reihe/Serie	Springer Series in Materials Science
Zusatzinfo	XVI, 348 p.
Verlagsort	Berlin
Sprache	englisch
Maße	155 x 235 mm
Gewicht	556 g
Themenwelt	Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik
	Technik ► Elektrotechnik / Energietechnik
	Technik ► Maschinenbau
Schlagworte	band structure • Crystal • Diffusion • Kinetics • Materials properties • Materials Science • mechanical property • optical properties • scattering • semiconductor • semiconductors • Silicides • Thin Films
ISBN-10	3-642-64069-9 / 3642640699
ISBN-13	978-3-642-64069-8 / 9783642640698
Zustand	Neuware