Gettering and Defect Engineering in Semiconductor Technology XIV
Seiten
2011
Trans Tech (Verlag)
978-3-03785-232-3 (ISBN)
Trans Tech (Verlag)
978-3-03785-232-3 (ISBN)
Covers the most important issues in the field of Gettering and Defect Engineering in Semiconductor Technology, ranging from the theoretical analysis of defect problems to practical engineering solutions, with the emphasis on Si-based materials. This title also discusses topics such as materials for solar cells and photonics.
The papers contained herein cover the most important and timely issues in the field of "Gettering and Defect Engineering in Semiconductor Technology", ranging from the theoretical analysis of defect problems to practical engineering solutions, with the emphasis on Si-based materials. Apart from the traditional topics of defect and materials engineering, characterization, modeling and simulation, and the co-integration of various material classes, topics such as materials for solar cells and photonics are discussed. Defects in graphene and in nanocrystals and nanowires are also treated, making this a very up-to-date survey of the field.
The papers contained herein cover the most important and timely issues in the field of "Gettering and Defect Engineering in Semiconductor Technology", ranging from the theoretical analysis of defect problems to practical engineering solutions, with the emphasis on Si-based materials. Apart from the traditional topics of defect and materials engineering, characterization, modeling and simulation, and the co-integration of various material classes, topics such as materials for solar cells and photonics are discussed. Defects in graphene and in nanocrystals and nanowires are also treated, making this a very up-to-date survey of the field.
| Erscheint lt. Verlag | 1.10.2011 |
|---|---|
| Sprache | englisch |
| Maße | 170 x 240 mm |
| Gewicht | 1100 g |
| Themenwelt | Naturwissenschaften ► Physik / Astronomie ► Atom- / Kern- / Molekularphysik |
| Technik ► Maschinenbau | |
| Schlagworte | annealing • Czochralski Silicon • Deep Level • Defect • Dislocation • DLTS • Engineering • Germanium • Grain boundary • Hydrogen • ion implantation • iron • Luminescence • Multicrystalline Silicon • oxygen • Radiation Defect • Silicon • Transmission Electron Microscopy (TEM) • vacancy • Void • Werkstoffe |
| ISBN-10 | 3-03785-232-1 / 3037852321 |
| ISBN-13 | 978-3-03785-232-3 / 9783037852323 |
| Zustand | Neuware |
| Informationen gemäß Produktsicherheitsverordnung (GPSR) | |
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