Gettering Defects in Semiconductors (eBook)

Victor A. Perevostchikov, Vladimir D. Skoupov (Autoren)

eBook Download: PDF

2005 | 2005
XVI, 388 Seiten
Springer Berlin (Verlag)
978-3-540-29499-3 (ISBN)

Infos

Gettering Defects in Semiconductors fulfills three basic purposes:

- to systematize the experience and research in exploiting various gettering techniques in microelectronics and nanoelectronics;

- to identify new directions in research, particularly to enhance the perspective of professionals and young researchers and specialists;

- to fill a gap in the contemporary literature on the underlying semiconductor-material theory.

The authors address not only well-established gettering techniques but also describe contemporary trends in gettering technologies from an international perspective. The types and properties of structural defects in semiconductors, their generating and their transforming mechanisms during fabrication are described. The primary emphasis is placed on classifying and describing specific gettering techniques, their specificity arising from both their position in a general technological process and the regimes of their application. This book addresses both engineers and material scientists interested in semiconducting materials theory and also undergraduate and graduate students in solid-state microelectronics and nanoelectronics. A comprehensive list of references provides readers with direction for further reading.

Inhalt

Preface 6
Contents 9
List of abbreviations 11
Names and abbreviations of publishing houses and periodicals 14
Introduction 16
1 Basic technological processes and defect formation in the components of device structures 20
1.1. General 20
1.2 General information on the technology of growing crystals and their mechanical treatment 32
1.3 Technological processes of dielectric film deposition and semiconductor oxidation 50
1.4 Diffusive processes in semiconductors 57
2 Effects of defects on electrophysical and functional parameters in semiconducting structures and devices 94
2.1 General 94
2.2 Point defects, aggregates and microdefects 97
2.3 Dislocations and stacking faults 110
2.4 Defects in the device layers of the silicon-on-dielectric (SOD) structures 117
3 Techniques for high–temperature gettering 141
3.1 Gettering by structurally–damaged layers 141
3.2 Gettering by heterophase layers 176
3.3 Thermal treatments in gettering ambients 181
3.4 Internal getter 183
3.5 Comparative analysis of gettering technique efficiency 193
3.6 Mechanisms and models of gettering processes 196
4 Physical foundations for low–temperature gettering techniques 211
4.1 Gettering effects during an abrasive and chemical treatment of crystal surfaces 212
4.2 Structural changes in hydrostatically–compressed semiconductors 234
4.3 Structural changes in microdefects and properties of silicon and silicon–based ultrasonically–irradiated structures 265
4.4 Irradiation-stimulated gettering 298
CONCLUSION 355
References 356
Subject Index 380
Authors’ Index 396

Produkt-Details

• Erscheint lt. Verlag: 12.12.2005
• Reihe/Serie: Springer Series in Advanced Microelectronics
• Übersetzer: Victor Gloumov
• Zusatzinfo: XVI, 388 p. 70 illus.
• Verlagsort: Berlin
• Sprache: englisch
• Themenwelt: Naturwissenschaften ► Chemie
• Themenwelt: Technik ► Elektrotechnik / Energietechnik
• Schlagworte: defects • Electronics • Gettering Defects • Gettering Techniques • Material • Microelectronic Technologies • semiconductor
• ISBN-10: 3-540-29499-6 / 3540294996
• ISBN-13: 978-3-540-29499-3 / 9783540294993