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Advanced High Voltage Power Device Concepts

B. Jayant Baliga (Autor)

Buch | Hardcover

568 Seiten

2011 | 2012
Springer-Verlag New York Inc.
978-1-4614-0268-8 (ISBN)

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The devices described in “Advanced MOS-Gated Thyristor Concepts” are utilized in microelectronics production equipment, in power transmission equipment, and for very high power motor control in electric trains, steel-mills, etc. Advanced concepts that enable improving the performance of power thyristors are discussed here, along with devices with blocking voltage capabilities of 5,000-V, 10,000-V and 15,000-V. Throughout the book, analytical models are generated to allow a simple analysis of the structures and to obtain insight into the underlying physics. The results of two-dimensional simulations are provided to corroborate the analytical models and give greater insight into the device operation.

1 Introduction.- 2 Silicon Thyristors.- 3 Silicon Carbide Thyristors.- 4 Silicon GTO.- 5 Silicon IGBT.- 6 SiC Planar MOSFET Structures.- 7 Silicon Carbide IGBT.- 8 Silicon MCT.- 9 Silicon BRT.- 10 Silicon EST.- 11 Synopsis.

Zusatzinfo	XVI, 568 p.
Verlagsort	New York, NY
Sprache	englisch
Maße	155 x 235 mm
Themenwelt	Naturwissenschaften ► Chemie ► Analytische Chemie
	Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik
	Technik ► Elektrotechnik / Energietechnik
Schlagworte	Emitter Switched Thyristor • Hochspannung • Insulated Gate Bipolar Transistors • MOS-Controlled Thyristors • semiconductors • SiC Devices
ISBN-10	1-4614-0268-9 / 1461402689
ISBN-13	978-1-4614-0268-8 / 9781461402688
Zustand	Neuware