Terrestrial Neutron-induced Soft Error In Advanced Memory Devices

Takashi Nakamura, Eishi Ibe, Mamoru Baba, Yasuo Yahagi, Hideaki Kameyama (Autoren)

Buch | Hardcover

368 Seiten

2008
World Scientific Publishing Co Pte Ltd (Verlag)
978-981-277-881-9 (ISBN)

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Terrestrial neutron-induced soft errors of semiconductor memory devices are a major concern in reliability issues. Understanding the mechanism and quantifying soft-error rates are primarily crucial for the design and quality assurance of semiconductor memory devices. This book covers the relevant topics in terrestrial neutron-induced soft errors.

Terrestrial neutron-induced soft errors in semiconductor memory devices are currently a major concern in reliability issues. Understanding the mechanism and quantifying soft-error rates are primarily crucial for the design and quality assurance of semiconductor memory devices.This book covers the relevant up-to-date topics in terrestrial neutron-induced soft errors, and aims to provide succinct knowledge on neutron-induced soft errors to the readers by presenting several valuable and unique features.

Terrestrial Neutron Spectrometry and Dosimetry; Irradiation Test in the Terrestrial Field; Neutron Irradiation Test Facilities; Review of Experimental Data and Discussions; Monte Carlo Simulation Methods; Simulation Results and Their Implications; International Standardization of Neutron Test Method; Summary and Challenges.

Verlagsort	Singapore
Sprache	englisch
Themenwelt	Informatik ► Weitere Themen ► Hardware
ISBN-10	981-277-881-0 / 9812778810
ISBN-13	978-981-277-881-9 / 9789812778819
Zustand	Neuware