Nonvolatile Memory Design

Magnetic, Resistive, and Phase Change

Hai Li, Yiran Chen (Autoren)

Buch | Softcover

204 Seiten

2017
CRC Press (Verlag)
978-1-138-07663-1 (ISBN)

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The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.

Hai Li

Introduction to Semiconductor Memories. Phase Change Memory (PCM). Toggle-Mode MRAM (TM-MRAM). Spin-Torque Transfer RAM (STT -RAM). Resistive RAM (R-RAM). Memresistor. The Future of Nonvolatile Memory.

Erscheinungsdatum	22.04.2017
Zusatzinfo	10 Tables, black and white; 175 Illustrations, black and white
Verlagsort	London
Sprache	englisch
Maße	156 x 234 mm
Gewicht	453 g
Themenwelt	Mathematik / Informatik ► Informatik ► Theorie / Studium
	Technik ► Elektrotechnik / Energietechnik
	Technik ► Umwelttechnik / Biotechnologie
ISBN-10	1-138-07663-5 / 1138076635
ISBN-13	978-1-138-07663-1 / 9781138076631
Zustand	Neuware